| Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes |
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| 引用本文： | 张晓昕,曾一平,王晓光,王保强,朱占平.Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes[J].中国物理 B,2004,13(9):1560-1563. |
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| 作者姓名： | 张晓昕 曾一平 王晓光 王保强 朱占平 |
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| 作者单位： | Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;National Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| 摘 要： | Resonant tunnelling diodes with different structures were grown. Their photoluminescence spectra were investigated. By contrast, the luminescence in the quantum well is separated from that of other epilayers. The result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. So the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. This offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities.
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| 关 键 词： | 共振隧道二极管 光致发光 量子阱 差分电阻 发光强度 电子性能 |
| 收稿时间： | 2003-12-15 |
Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes |
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| Zhang Xiao-Xin,Zeng Yi-Ping,Wang Xiao-Guang,Wang Bao-Qiang and Zhu Zhan-Ping.Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes[J].Chinese Physics B,2004,13(9):1560-1563. |
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| Authors: | Zhang Xiao-Xin Zeng Yi-Ping Wang Xiao-Guang Wang Bao-Qiang and Zhu Zhan-Ping |
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| Institution: | National Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Resonant tunnelling diodes with different structures were grown. Their photoluminescence spectra were investigated. By contrast, the luminescence in the quantum well is separated from that of other epilayers. The result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. So the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. This offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities. |
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| Keywords: | resonant tunnelling diode photoluminescence negative differential resistance integrated luminescence intensity |
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