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1.5μm LUMINESCENCE CHARACTERISTIC OF ERBIUM IN B, P DOPED a-SiO:H FILMS
引用本文:梁建军,陈维德,王永谦,常勇,王占国.1.5μm LUMINESCENCE CHARACTERISTIC OF ERBIUM IN B, P DOPED a-SiO:H FILMS[J].中国物理 B,2000,9(10):783-786.
作者姓名:梁建军  陈维德  王永谦  常勇  王占国
作者单位:Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing 100080, China; State Key Laboratory for Infrared Physic;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing 100080, China; State Key Laboratory for Infrared Physic;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing 100080, China; State Key Laboratory for Infrared Physic;State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
基金项目:Project supported by the State Key Project of Basic Research and by the National Natural Science Foundation of China (Grant Nos. 69976028 and 69636040).
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收稿时间:2/2/2000 12:00:00 AM
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