1.5μm LUMINESCENCE CHARACTERISTIC OF ERBIUM IN B, P DOPED a-SiO:H FILMS |
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引用本文: | 梁建军,陈维德,王永谦,常勇,王占国.1.5μm LUMINESCENCE CHARACTERISTIC OF ERBIUM IN B, P DOPED a-SiO:H FILMS[J].中国物理 B,2000,9(10):783-786. |
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作者姓名: | 梁建军 陈维德 王永谦 常勇 王占国 |
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作者单位: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing 100080, China; State Key Laboratory for Infrared Physic;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing 100080, China; State Key Laboratory for Infrared Physic;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing 100080, China; State Key Laboratory for Infrared Physic;State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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基金项目: | Project supported by the State Key Project of Basic Research and by the National Natural Science Foundation of China (Grant Nos. 69976028 and 69636040). |
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收稿时间: | 2/2/2000 12:00:00 AM |
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