LARGE AND EXTREMELY FAST THIRD-ORDER NON-LINEARITY OF Ag NANOPARTICLES EMBEDDED INTO A CsxO SEMICONDUCTOR MATRIX |
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Authors: | Zhang Qi-feng Shao Qing-yi Hou Shi-min Zhang Geng-min Liu Wei-min Xue Zeng-quan Wu Jin-lei Wang Shu-feng Liang Rui-sheng Huang Wen-tao Wang Dan-ling Gong Qi-huang |
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Institution: | Department of Electronics, Peking University, Beijing 100871, China; Department of Physics, Peking University, Beijing 100871, China |
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Abstract: | The third-order optical nonlinearity of Ag-O-Cs thin films, where Ag nanoparticles are embedded into a CsxO semiconductor matrix, was measured by the femtosecond optical Kerr technique. The third-order nonlinear optical susceptibility, χ(3), of the thin films was estimated to be 1.1×10-9 esu at the incident wavelength of 820 nm. The response time, i.e. the full width at half-maximum of the Kerr signal, is as fast as 114 fs only. The intrinsic third-order optical nonlinearity can be attributed to the intraband transition of electrons from the occupied state near the Fermi level to the unoccupied state. It is suggested that such a nonlinearity is further enhanced by the local field effect that is present in the metallic nanoparticles composite thin films. |
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Keywords: | optical Kerr effect metallic nanoparticles third-order nonlinearity |
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