| 磷离子注入速率对4H-SiC(0001)晶格恢复与电阻率降低的影响 |
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| 引用本文： | 高欣,孙国胜,李晋闽,张永兴,王雷,赵万顺,曾一平.磷离子注入速率对4H-SiC(0001)晶格恢复与电阻率降低的影响[J].中国物理 B,2005,14(3):599-603. |
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| 作者姓名： | 高欣 孙国胜 李晋闽 张永兴 王雷 赵万顺 曾一平 |
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| 作者单位： | Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| 摘 要： | 高剂量的磷离子注入4H-SiC(0001)晶面，注入速率从1.0×1012到4.0×1012 P+ cm-2s-1变化，而注入剂量固定为2.0×1015 P+ cm-2。室温注入，1500oC的高温下退火。利用光荧光和拉曼谱分析注入产生的晶格损伤以及退火后的残余缺陷。通过霍耳测试来分析注入层的电学性质。基于上述测试结果，发现通过减小磷离子的注入速率，极大地减少了注入层的损伤及缺陷。考虑到室温注入以及相对较低的退火温度(1500 oC)，在注入速率为1.0×1012 P+ cm-2s-1及施主浓度下为4.4×1019 cm-3的条件下，获得了非常低的方块电阻106 Ω/sq。
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| 关 键 词： | 离子注入 碳化硅 磷 光荧光 |
| 收稿时间： | 2004-05-25 |
Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H—SiC |
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| Gao Xin,Sun Guo-Sheng,Li Jin-Min,Zhang Yong-Xin,Wang Lei,Zhao Wan-Shun and Zeng Yi-Ping.Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H—SiC[J].Chinese Physics B,2005,14(3):599-603. |
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| Authors: | Gao Xin Sun Guo-Sheng Li Jin-Min Zhang Yong-Xin Wang Lei Zhao Wan-Shun and Zeng Yi-Ping |
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| Institution: | Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China |
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| Abstract: | High-dose ion implantation of phosphorus into 4H—SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0×1012 P+cm-2?s-1 and keeping the implantation dose constant at 2.0×1015 P+cm-2. The implantations are performed at room temperature and subsequently annealed at 1500℃. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500℃, a reasonably low sheet resistance of 106Ω/□ is obtained at ion flux of 1.0×1012 P+cm-2?s-1 with a donor concentration of 4.4×1019cm-3. |
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| Keywords: | ion implantation silicon carbide phosphorus photoluminescence |
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