Quantum confinement analysis of nanostructures in oxidation of SiGe alloys |
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Authors: | Huang Wei-Qi and Liu Shi-Rong |
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Institution: | Analytical Electron Microscope Lab, Chinese Academy of Sciences, Guiyang 550003, China; Department of Physics, Guizhou University, Guiyang 550025, China; Analytical Electron Microscope Lab, Chinese Academy of Sciences, Guiyang 550003, China |
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Abstract: | We report the investigation on the oxidation behaviour of Si_{1-x}Ge_x alloys (x=0.05, 0.15, and 0.25). It was found for the first time that a nanocap (thickness: 1.6-2.0nm) was formed on the oxide film after fast oxidation. Some new peaks in photoluminescence spectra were discovered, which could be related to the Ge nanocap, the Ge nanolayer (thickness: 0.8-1.2nm) and the Ge nanoparticles (with various diameters from 2.6nm to 7.4nm), respectively. A suitable model and several new calculating formulae combined with the Unrestricted Hartree-Fock-Roothaan (UHFR) method and quantum confinement analysis have been proposed to interpret the PL spectra and the nanostructure mechanism in the oxide and Ge segregation. |
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Keywords: | quantum confinement PL spectra nanostructure rapid oxidation |
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