FPGA配置片反熔丝PROMs加速器地面单粒子效应特性研究

针对0.13 μm CMOS（Complementary Metal-Oxide-Semiconductor）体硅外延工艺下FPGA（Field Programmable Gate Arrays）配置片反熔丝PROM（Programmable-Read-Only-Memory）进行了单粒子效应（Single Event Effects SEEs）的加速器地面模拟试验研究。以PROM的存储容量、数据类型和工艺差异性为研究变量，考核与验证其在不同种类和能量粒子入射的系列性加速器地面SEEs模拟试验。研究结果表明，相对于8 Mbits PROM而言，空片16 Mbits PROM抗辐射性能最优，且从翻转饱和截面上说，16 Mbits的PROM具备更高的可靠性，优于国外同系列的芯片类型，试验用PROM芯片的单粒子锁定阈值>99.0 MeV·cm2/mg。另一方面，研究0.13 μm CMOS普通与深阱工艺技术下PROM芯片单粒子翻转效应异同性的实验数据表明，在高LET（Linear Energy Transfer）处的两者抗辐射性能并无明显变化，但是低LET处（LET翻转阈值）的加固效果较为明显，即抗辐射技术能力主要体现在LET翻转阈值的提升而非翻转截面的减小。Single event effects (SEEs) have been characterized and investigated on one-time configured devices for field-programmable-gate-arrays (FPGA) of programmable-read-only-memory (PROM) in 0.13 μm Complementary Metal-Oxide-Semiconductor (CMOS) technology.The variables of their memory size,written data and technology have been taken into consideration as the key parameters affecting the SEEs sensitivity when testing and verifying the reliability/radiation tolerance on self-made PROMs by heavy ions.The results show that,16 Mbits PROM within blanked data has been studied that it has better performance to radiation tolerance as compared with the 8 Mbits PROMs.Additionally,16 Mbits PROMs have the higher reliability,if based on the viewpoint of the saturated single event upset cross-section.To the single event latchup,16 Mbits PROMs were exposed to a total fluence of 107 ions/cm2 at the linear energy transfer (LET) of 99.0 MeV·cm2/mg and no obvious fluctuation of current has been observed.Additionally,as comparing the zone of high LET value,0.13 μm CMOS transistors with deep-well technology present a better radiation hardened approach than normal technology,especially in improving the threshold of LET at the zone of low LET value.

Investigation Single Event Effects Characterization on Configuration PROMs of FPGA Induced by Heavy Ions

Single event effects (SEEs) have been characterized and investigated on one-time configured devices for field-programmable-gate-arrays (FPGA) of programmable-read-only-memory (PROM) in 0.13 μm Complementary Metal-Oxide-Semiconductor (CMOS) technology.The variables of their memory size,written data and technology have been taken into consideration as the key parameters affecting the SEEs sensitivity when testing and verifying the reliability/radiation tolerance on self-made PROMs by heavy ions.The results show that,16 Mbits PROM within blanked data has been studied that it has better performance to radiation tolerance as compared with the 8 Mbits PROMs.Additionally,16 Mbits PROMs have the higher reliability,if based on the viewpoint of the saturated single event upset cross-section.To the single event latchup,16 Mbits PROMs were exposed to a total fluence of 107 ions/cm2 at the linear energy transfer (LET) of 99.0 MeV·cm2/mg and no obvious fluctuation of current has been observed.Additionally,as comparing the zone of high LET value,0.13 μm CMOS transistors with deep-well technology present a better radiation hardened approach than normal technology,especially in improving the threshold of LET at the zone of low LET value.