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快重离子辐照引起Ni/SiO2界面原子混合及相变研究
引用本文:刘纯宝,王志光,魏孔芳,臧航,姚存峰,马艺准,盛彦斌,缑洁,金运范,A.Benyagoub,M.Toulemonde.快重离子辐照引起Ni/SiO2界面原子混合及相变研究[J].原子核物理评论,2009,26(1):44-47.
作者姓名:刘纯宝  王志光  魏孔芳  臧航  姚存峰  马艺准  盛彦斌  缑洁  金运范  A.Benyagoub  M.Toulemonde
作者单位:1 中国科学院近代物理研究所, 甘肃 兰州 730000; 2 CIRIL, BP5133, 14070 Caen Cedex 05, France; 3 中国科学院研究生院, 北京 100049)
基金项目:国家自然科学基金资助项目(10125522,10475102);;中国科学院西部之光联合学者资助项目(O605110XL0)~~
摘    要:在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/SiO2样品, 用卢瑟福背散射和X射线衍射技术对样品进行了分析。 通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化, 探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。 实验结果显示, Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni, Si和O原子的混合。 实验观测到低剂量Xe离子辐照可产生NiSi2相, 而高剂量Xe离子辐照则导致了Ni3Si和NiO相的形成。 根据热峰模型, Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。Ni/SiO2 interface were irradiated at room temperature with 308 MeV Xe ions to 1×1012, 5×1012 Xe/cm2 and 853 MeV Pb ions to 5×1011 Pb/cm2, respectively. These samples were analyzed using Rutherford Backscattering Spectrometry (RBS) and X ray diffraction spectroscopy (XRD), from which the intermixing and phase change were investigated. The obtained results show that both Xe and Pb ions could induce diffusion of Ni atoms to SiO2 substrates and result in intermixing of Ni with SiO2. Furthermore, 1.0×1012 Xe/cm2 irradiation induced the formation of NiSi2 and 5.0×1012 Xe/cm2 irradiation created Ni3Si and NiO phases. The diffusion of Ni atoms and the formation of new phase may be driven by a transient thermal spike process induced by the intense electronic energy loss along the incident ion path.

关 键 词:快重离子辐照    界面原子混合与结构相变    卢瑟福背散射    X射线衍射
收稿时间:1900-01-01

Investigation of Intermixing and Phase Change of Ni/SiO_2 under Swift Heavy Ion Irradiation
LIU Chun-bao,WANG Zhi-guang,WEI Kong-fang,ZANG Hang,YAO Cun-feng,MA Yi-zhun,SHENG Yan-bin,GOU Jie,JIN Yun-fan,A.Benyagoub,M.Toulemonde.Investigation of Intermixing and Phase Change of Ni/SiO_2 under Swift Heavy Ion Irradiation[J].Nuclear Physics Review,2009,26(1):44-47.
Authors:LIU Chun-bao  WANG Zhi-guang  WEI Kong-fang  ZANG Hang  YAO Cun-feng  MA Yi-zhun  SHENG Yan-bin  GOU Jie  JIN Yun-fan  ABenyagoub  MToulemonde
Institution:1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; 2 CIRIL, BP5133, 14070 Caen Cedex 05, France; 3 Graduated School of Chinese Academy of Sciences, Beijing 100049, China
Abstract:Ni/SiO_2 interface were irradiated at room temperature with 308 MeV Xe ions to 1×10~(12), 5×10~(12) Xe/cm~2 and 853 MeV Pb ions to 5× 10~(11) Pb/cm~2, respectively. These samples were analyzed using Rutherford Backscattering Spectrometry (RBS) and X-ray diffraction spectroscopy (XRD) , from which the intermixing and phase change were investigated. The obtained results show that both Xe- and Pb-ions could induce diffusion of Ni atoms to SiO_2 substrates and result in intermixing of Ni with SiO_2. Furthermore, 1.0×10~(12) Xe/cm~2 irradiation induced the formation of NiSi_2 and 5.0×10~(12) Xe/cm~2 irradiation created Ni_3 Si and NiO phases. The diffusion of Ni atoms and the formation of new phase may be driven by a transient thermal spike process induced by the intense electronic energy loss along the incident ion path.
Keywords:swift heavy ion irradiation  intermixing and phase change  RBS  XRD  
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