| 中子引起单粒子翻转过程中能量沉积统计分析 |
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| 引用本文： | 李华.中子引起单粒子翻转过程中能量沉积统计分析[J].原子核物理评论,2006,23(1):46-50. |
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| 作者姓名： | 李华 |
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| 作者单位： | 暨南大学物理系,广东广州510632 |
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| 摘 要： | 利用Monte Carlo方法，对14MeV中子引起存储器单粒子翻转过程进行了计算模拟，从而对引起单粒子翻转的关键因素——存储器灵敏区中的能量沉积进行了统计分析，为了解单粒子翻转随机过程提供了详细的能量沉积统计信息。The process of the single event upset induced by 14 MeV neutrons in SRAM silicon chip is simulated by using a Monte Carlo method. The deposited energies in sensitive volumes in the chip, which is an important factor in the single event upset, are statistically analysed. The statistic information about the deposited energies is provided for understanding the detailed random process of the single event upset.
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| 关 键 词： | 能量沉积 单粒子翻转 MonteCarlo模拟 |
| 文章编号： | 1007-4627（2006）01-0046-05 |
| 收稿时间： | 2005-07-07 |
| 修稿时间： | 2005-08-26 |
Statistic Analysis of Deposited Energy in Single Event Upset Induced by Neutrons |
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| LI Hua.Statistic Analysis of Deposited Energy in Single Event Upset Induced by Neutrons[J].Nuclear Physics Review,2006,23(1):46-50. |
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| Authors: | LI Hua |
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| Institution: | Physics Department of J inan University, Guangzhou 510632, China |
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| Abstract: | The process of the single event upset induced by 14 MeV neutrons in SRAM silicon chip is simulated by using a Monte Carlo method.The deposited energies in sensitive volumes in the chip,which is an important factor in the single event upset,are statistically analysed.The statistic information(about the) deposited energies is provided for understanding the detailed random process of the single event upset. |
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| Keywords: | deposited energy single event upset Monte Carlo simulation |
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