首页 | 本学科首页   官方微博 | 高级检索  
     检索      

P-型半导体探测器在放射治疗中的剂量特性研究
引用本文:吴爱东,陈义学,吴宜灿,刘磊.P-型半导体探测器在放射治疗中的剂量特性研究[J].原子核物理评论,2006,23(2):224-228.
作者姓名:吴爱东  陈义学  吴宜灿  刘磊
作者单位:[1]中国科学院等离子物理研究所,安徽合肥230031[2]安徽省立医院,安徽合肥230001
基金项目:中国科学院知识创新工程项目;安徽省自然科学基金
摘    要:电子束半导体探测器的测量精度易受到射线的能量、剂量率、入射方向和环境温度等条件的影响。此外,电子束测量射野中半导体探测器的存在将干扰均匀射野剂量场的正常分布。通过对P-型电子束半导体探测器在不同的电子束照射条件下的实际剂量测量,定量地评估了不同照射条件下电子束半导体探测器的剂量特性,以及它对电子束均匀照射野扰动的影响。The measurement accuracy of electron beam by using semiconductor detector is easily affected by beam energy, dose rate, beam incidence direction, environment temperature etc. Furthermore, the presence of the detectors on the patient surface perturbs the distribution of the radiation field. In the paper, the dose characteristics of semiconductor detector are quantitatively discussed. The perturbation of the symmetrical radiation field is investigated based on the measured results of P-type electron beam detector under different clinical conditions.

关 键 词:电子束    半导体探测器    剂量测量    扰动效应
文章编号:1007-4627(2006)02-0224-05
收稿时间:2005-11-20
修稿时间:2005-11-202006-01-12

Study on Dosimetry Characteristics of P-type Semiconductor Detector in Radiotherapy
WU Ai-dong,CHEN Yi-xue,WU Yi-can,LIU Lei.Study on Dosimetry Characteristics of P-type Semiconductor Detector in Radiotherapy[J].Nuclear Physics Review,2006,23(2):224-228.
Authors:WU Ai-dong  CHEN Yi-xue  WU Yi-can  LIU Lei
Institution:1 Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China; 2 Anhui Provbwial Hospital, Hefei 230001 , China
Abstract:The measurement accuracy of electron beam by using semiconductor detector is easily affected by beam energy,dose rate,beam incidence direction,environment temperature etc.Furthermore,the presence of the detectors on the patient surface perturbs the distribution of the radiation field.In the paper,the dose characteristics of semiconductor detector are quantitatively discussed.The perturbation of the symmetrical radiation field is investigated based on the measured results of P-type electron beam detector under different clinical conditions.
Keywords:electron beam  semiconductor detector  dosimetry  perturbation effect
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《原子核物理评论》浏览原始摘要信息
点击此处可从《原子核物理评论》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号