| 重离子辐照引起磁性隧道结功能失效类型及机理研究 |
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| 引用本文： | 赵培雄,刘杰,刘天奇,蔡畅,姬庆刚,李东青,贺泽,孙友梅,郑宏超.重离子辐照引起磁性隧道结功能失效类型及机理研究[J].原子核物理评论,2021,38(1):89-94. |
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| 作者姓名： | 赵培雄 刘杰 刘天奇 蔡畅 姬庆刚 李东青 贺泽 孙友梅 郑宏超 |
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| 作者单位： | 1.中国科学院近代物理研究所，兰州 730000 |
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| 基金项目： | 国家自然科学基金资助项目(11675233, 11690041, 11805244) |
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| 摘 要： | 重点研究了磁性隧道结(MTJ)的电学性能受离子注量影响的物理规律。实验首次发现了高能Ta离子辐射损伤导致MTJ电学功能失效的现象，主要失效模式为:高、低电阻态失效，其中79.9%的功能失效为高电阻态失效。计算表明，单个10.9 MeV/u的Ta离子辐照引入的损伤无法导致MTJ宏观电学功能失效。结合理论计算与Monte Carlo模拟分析，MTJ中的绝缘势垒层与铁磁薄膜的损伤是出现高、低电阻态失效的内因。
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| 关 键 词： | 重离子辐照效应 磁阻式存储器 磁隧道结 硬错误 |
| 收稿时间： | 2020-06-08 |
Investigation of Types and Mechanisms of MTJ Function Failure Induced by Heavy Ion Irradiation |
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| Peixiong ZHAO,Jie LIU,Tianqi LIU,Chang CAI,Qinggang JI,Dongqing LI,Ze HE,Youmei SUN,Hongchao ZHENG.Investigation of Types and Mechanisms of MTJ Function Failure Induced by Heavy Ion Irradiation[J].Nuclear Physics Review,2021,38(1):89-94. |
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| Authors: | Peixiong ZHAO Jie LIU Tianqi LIU Chang CAI Qinggang JI Dongqing LI Ze HE Youmei SUN Hongchao ZHENG |
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| Institution: | 1.Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China2.School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing 100049, China3.The 53rd Research Institute of China Electronics Technology Group Corporation, Tianjin 300000, China4.Beijing Institute of Microelectronic Technology, Beijing 100076, China |
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| Abstract: | We study the physical law of the influence of ion fluence on the electrical properties of magnetic tunnel junctions (MTJ). We find for the first time that high-energy ionization radiation damage caused the failure of MTJ electrical functions in our experiment. The main failure modes are high and low resistance state failures, of which 79.9% are high resistance state failures. Our results show that the damage caused by a single Ta ion with 10.9 MeV/u cannot cause the electrical function of MTJ to fail. Combining theoretical calculations and Monte Carlo simulation analysis, we derive that the damage to the tunnel insulating layer and the ferromagnetic film in the MTJ is the internal cause of high and low resistance state failure. |
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