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自旋密度光栅和本征GaAs量子阱中的电子自旋双极扩散
引用本文:余华梁,陈曦矅,狄俊安.自旋密度光栅和本征GaAs量子阱中的电子自旋双极扩散[J].中国光学,2013(5):710-716.
作者姓名:余华梁  陈曦矅  狄俊安
作者单位:1. 闽江学院物理与电子信息工程系,福建福州,350108
2. 福建师范大学物理系,福建福州,350108
基金项目:Specialized Scientific Research Fundation of Higher Education Institution of Fujian Province , China ( No. JK2011039);Natural Science Foundation of Fujian Province of China
摘    要:为研究空穴对自旋极化电子扩散的影响,提出用自旋密度光栅方法来观察电子自旋扩散过程。由飞秒激光在本征GaAs多量子阱中激发产生瞬态自旋光栅和瞬态自旋密度光栅,并用于研究电子自旋扩散和电子自旋双极扩散。实验测得自旋双极扩散系数Das =25.4 cm 2/s,低于自旋扩散系数Ds =113.0 cm 2/s,表明自旋密度光栅中电子自旋扩散受到空穴的显著影响。

关 键 词:自旋密度光栅  GaAs量子阱  电子自旋双极扩散  飞秒激光

Spin concentration grating and electron spin ambipolar diffusion in intrinsic GaAs multiple quantum wells
YU Hua-liang , CHEN Xi-yao , DI Jun-an.Spin concentration grating and electron spin ambipolar diffusion in intrinsic GaAs multiple quantum wells[J].Chinese Optics,2013(5):710-716.
Authors:YU Hua-liang  CHEN Xi-yao  DI Jun-an
Institution:1. Department of Physics and Electronic Information Engineering,Minjiang University, Fuzhou 350108, China; 2. Department of Physics, Fujian Teacher University, Fuzhou 350108, China)
Abstract:In order to research the effect of holes on the spin electron diffusion , a method of resonant spin am-plication called"Spin Concentration Grating(SCG)" is adopt to observe the process of electron spin diffusion . Transient spin grating and spin concentration grating excited by femtosecond laser beams are used to investigate electron spin diffusion and "electron spin ambipolar diffusion" in intrinsic GaAs multiple quantum wells .The measured coefficient of "electron spin ambipolar diffusion" Das =25.4 cm 2· s-1 is lower than that of electron spin diffusion Ds=113.0 cm 2· s-1 , which indicates that the influence of holes on electron spin diffusion in spin concentration grating is notable .
Keywords:spin concentration grating  GaAs quantum well  electron spin ambipolar diffusion  fs laser
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