| 激光等离子体极紫外光刻光源 |
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| 引用本文： | 窦银萍,孙长凯,林景全.激光等离子体极紫外光刻光源[J].中国光学,2013,6(1):20-33. |
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| 作者姓名： | 窦银萍 孙长凯 林景全 |
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| 作者单位： | 长春理工大学 理学院, 吉林 长春 130022 |
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| 基金项目： | 国家自然科学基金资助项目（No.61178022）; 吉林省科技厅资助项目（No.20111812） |
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| 摘 要： | 研究并讨论了下一代光刻的核心技术之一—激光等离子体极紫外光刻光源。简要介绍了欧美和日本等国极紫外光刻技术的发展概况,分析了新兴的下一代13.5 nm极紫外光刻光源的现状,特别讨论了国内外激光等离子体极紫外光刻光源的现状,指出目前其存在的主要问题是如何提高光源的转化效率和减少光源的碎屑。文中同时概述了6.x nm（6.5～6.7 nm）极紫外光刻光源的最新研究工作。最后,介绍了作者所在研究小组近年来在极紫外光源和极紫外光刻掩模缺陷检测方面开展的研究工作。
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| 关 键 词： | 极紫外光刻 激光等离子体 极紫外光源 转换效率 |
| 收稿时间： | 2012-10-11 |
| 修稿时间： | 2012-12-13 |
Laser-produced plasma light source for extreme ultraviolet lithography |
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| DOU Yin-ping,SUN Chang-kai,LIN Jing-quan.Laser-produced plasma light source for extreme ultraviolet lithography[J].Chinese Optics,2013,6(1):20-33. |
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| Authors: | DOU Yin-ping SUN Chang-kai LIN Jing-quan |
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| Institution: | College of Science, Changchun University of Science and Technology, Changchun 130022, China |
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| Abstract: | Laser-produced Plasma(LPP) Extreme Ultraviolet Lithography(EUVL) light source, one of the core technologies of next generation lithography, is discussed. A brief review to the development situation of lithography technology in Europe, America and Japan is given. Being a newly arisen research direction, the status of next generation 13.5 nm EUVL source is analyzed, and especially the research on EUVL source based upon LPP at home and abroad is described and analyzed in detail. It points out that the main problems for the EUVL are how to improve the conversion efficiency of EUV light and how to reduce the light debris. Furthermore, the latest research status on the EUVL source at 6.7 nm is also presented. Finally, it introduces the research work of the author's group on EUVL light sources and the detection of mask defect for EUVL. |
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| Keywords: | Extreme Ultraviolet Lithography(EUVL) Laser-produced Plasma(LPP) Extreme Ultraviolet(EUV) source Conversion Efficiency(CE) |
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