| 准分子激光辐照HgCdTe半导体材料的损伤机理研究 |
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| 引用本文： | 戚树明,陈传松,周新玲,郭娟,王娟,满宝元.准分子激光辐照HgCdTe半导体材料的损伤机理研究[J].量子光学学报,2009,15(1):76-83. |
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| 作者姓名： | 戚树明 陈传松 周新玲 郭娟 王娟 满宝元 |
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| 作者单位： | 山东师范大学物理与电子科学学院,山东,济南,250014 |
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| 摘 要： | 利用光学显微镜和扫描电子显微镜对248 nm准分子脉冲强激光辐照的HgCdTe晶片表面进行了观察,观察到一些与红外波段内激光辐照HgCdTe晶片时大不相同的实验现象.研究表明,红外波段内1 064nm激光辐照HgCdTe半导体材料的损伤机制主要为光热作用,而紫外波段248 nm准分子激光对HgCdTe材料的损伤机制既包含光化学作用也包含光热作用.分析了准分子激光对晶体的机械破坏现象,同时对HgCdTe材料在激光辐照区的条纹产生机理进行了探讨,发现激光驱动声波理论模型比光学模型和热导波模型能更好地解释HgCdTe晶体表面的条纹现象.
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| 关 键 词： | 248 nm 准分子激光 损伤机理 表面周期性条纹 |
| 收稿时间： | 2008/3/15 |
Study of Damage Mechanism on HgCdTe Semiconductor Material by Excimer Laser Irradiation |
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| QI Shu-ming,CHEN Chuan-song,ZHOU Xin-ling,GUO Juan,WANG Juan,MAN Bao-yuan.Study of Damage Mechanism on HgCdTe Semiconductor Material by Excimer Laser Irradiation[J].Acta Sinica Quantum Optica,2009,15(1):76-83. |
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| Authors: | QI Shu-ming CHEN Chuan-song ZHOU Xin-ling GUO Juan WANG Juan MAN Bao-yuan |
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| Abstract: | The surfaces of HgCdTe chips irradiated by 248 nm excimer laser are examined by an optical microscope and scanning electron microscope,which are much different from that irradiated by infrared in-band light.It shows that the damage mechanism of the crystal irradiated by infrared band 1 064 nm light is photothermal effect,while that to the irradiation of ultraviolet band 248 nm light incorporates both photochemical and photothermal effect.At the same time,the periodic ripple phenomenon on HgCdTe surface indu... |
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| Keywords: | HgCdTe |
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