| MOCVD法生长Ca_(0.5)In_(0.5)P外延层的近红外光致发光与温度的依赖关系 |
| |
| 引用本文： | 高瑛,赵家龙,刘学彦,苏锡安,梁家昌,李景,关兴国,章其麟.MOCVD法生长Ca_(0.5)In_(0.5)P外延层的近红外光致发光与温度的依赖关系[J].光学学报,1992,12(10):897-901. |
| |
| 作者姓名： | 高瑛 赵家龙 刘学彦 苏锡安 梁家昌 李景 关兴国 章其麟 |
| |
| 作者单位： | 中国民航学院 天津300300
(高瑛，赵家龙，刘学彦，苏锡安，梁家昌)，河北半导体研究所 石家庄050051
(李景，关兴国)，河北半导体研究所 石家庄050051(章其麟) |
| |
| 基金项目： | 国家自然科学基金，中国科学院长春物理研究所激发态物理开放实验室基金资助课题 |
| |
| 摘 要： | 测量了用金属有机物化学气相沉积(MOCVD)方法在GaAs衬底上生长的Ga_(0.5)In_(0.5)P外延层的近红外光致发光光谱,观察到三个与深能级有关的发光带,其峰值能量分别为1.17,0.99和0.85eV.研究了这些发光带的发光强度,峰值位置和半宽度随温度的变化关系,并初步分析其来源.
|
| 关 键 词： | 近红外光致发光 深能级 金属有机物化学气相沉积 Ga_(0.5)In_(0.5)P |
| 收稿时间： | 1991/11/25 |
Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga_(0.5)ln_(0.5)P epilayer grown on GaAs substrate by MOCVD method |
| |
| GAO YING ZHAO JIALONG Liu XUEYAN Su XIAN.Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga_(0.5)ln_(0.5)P epilayer grown on GaAs substrate by MOCVD method[J].Acta Optica Sinica,1992,12(10):897-901. |
| |
| Authors: | GAO YING ZHAO JIALONG Liu XUEYAN Su XIAN |
| |
| Abstract: | The near-Infrared photoluminescence spectroscopies of Ga0.5In0.5P epilayer grown on GaAs substrate by metalorganic chemical vapor deposition (MOCVD) are measured. Three photoluminegcence peaks from deep levels are observed, and their peak energies are 1.17, 0.99 and 0.85eV, respectively. We further investigate the temperature dependence of the intensity, peak position and half width of the photoluminescence bands and discuss their origins. |
| |
| Keywords: | near-infrared photoluminescence deep level metalorganic chemical Vapor deposition Ga0 5In0 5P |
| 本文献已被 CNKI 等数据库收录！ |
