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| 激光直写邻近效应的校正 | |
| 引用本文： | 杜惊雷,黄奇忠,姚军,张怡霄,郭永康,邱传凯,崔铮.激光直写邻近效应的校正[J].光学学报,1999,19(7):953-957. |
| 作者姓名： | 杜惊雷 黄奇忠 姚军 张怡霄 郭永康 邱传凯 崔铮 |
| 作者单位： | 1. 四川大学物理系,成都,610064 2. 中国科学院光电技术研究所微细加工光学技术国家开放实验室,成都,610209 3. Central Microstructure Facility, Ratherford Appleton Lab. Chilton, Didcot, OX11 OQX, UK |
| 基金项目： | 国家自然科学基金,教育部博士点基金,中国科学院微细加工光学技术国家重点实验室资助项目 |
| 摘 要： | 邻近效应是限制光刻系统分辨力的一个重要因素，它也限制了激光直写在亚微米和亚半微米光刻中的应用。分析了激光直写邻近效应产生的原因，指出它和电子束直写及投影光刻的区别，提出了一种简便有效的邻近校正方法。实验表明，通过光学邻近校正（ＯＰＣ），利用微米级激光直写系统，制作出了０．６μｍ的实用光刻线条 |
| 关 键 词： | 激光直写 亚微米 邻近效应 光学邻近校正 |
| 收稿时间： | 1998/4/15 |
Optical Proximity Correction in Laser Direct Writing |
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| Du Jinglei,Huang Qizhong,Yao Jun,Zhang Yixiao,Guo Yongkang,Qiu Chuankai,Cui Zheng.Optical Proximity Correction in Laser Direct Writing[J].Acta Optica Sinica,1999,19(7):953-957. | |
| Authors: | Du Jinglei Huang Qizhong Yao Jun Zhang Yixiao Guo Yongkang Qiu Chuankai Cui Zheng |
| Abstract: | Proximity effect is an important factor which limits optical lithography resolution, and it also limits the applications of laser direct writing system in submicron and half submicron optical lithography. The production mechanism of proximity effect in laser direct writing is analyzed, its differences with projection optical lithography and electron beam lithography pointed out, and a convenient and effective optical proximity correction (OPC) method presented. The experimental results show that the feature size of 0.6 micron can be got by using OPC method in ISI 2802 laser direct write system. |
| Keywords: | laser direct writing submicron proximity effect optical proximity correction |
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