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利用梯度掺杂获得高量子效率的GaAs光电阴极
引用本文:杜晓晴,常本康,邹继军,李敏.利用梯度掺杂获得高量子效率的GaAs光电阴极[J].光学学报,2005,25(10):411-1414.
作者姓名:杜晓晴  常本康  邹继军  李敏
作者单位:南京理工大学电子工程与光电技术学院,南京,210094
基金项目:十五国防科技预研重点项目(404050501D)资助课题.
摘    要:获得高量子效率且稳定性良好的阴极一直是近年来发展GaAs光电阴极的重要方向。对晶面为(100),掺杂Be,厚度为1μm分子束外延生长的反射式GaAs发射层,设计了一种从体内到表面掺杂浓度由高到低分布的新型梯度掺杂结构。掺杂浓度的范围从1×1019cm-3到1×1018cm-3,并利用(Cs,O)激活技术制备了GaAs光电阴极。光谱响应测试曲线显示,与传统均匀掺杂的GaAs光电阴极相比,梯度掺杂的GaAs光电阴极的量子效率在整个波段都有提高,积分灵敏度可达1580μA/lm,且具有更好的稳定性。讨论了这种新型GaAs光电阴极获得更高量子效率的内在机理。该设计结构是现实可行的,且具有很大发展潜力,它为国内发展高性能GaAs光电阴极提供了一条重要途径。

关 键 词:光电子学  GaAs光电阴极  量子效率  梯度掺杂  激活  光谱响应  积分灵敏度
文章编号:0253-2239(2005)10-1411-4
收稿时间:2004-11-29
修稿时间:2005-03-12

High Quantum Efficiency GaAs Photocathode by Gradient Doping
Du Xiaoqing,Chang Benkang,Zou Jijun,Li Min.High Quantum Efficiency GaAs Photocathode by Gradient Doping[J].Acta Optica Sinica,2005,25(10):411-1414.
Authors:Du Xiaoqing  Chang Benkang  Zou Jijun  Li Min
Abstract:To achieve high quantum efficiency and good stability has been a main direction to develop GaAs photocathode recently. For a molecular beam epitaxy grown, (100) wafer, Be doping and 1 μm thickness reflection-mode GaAs emission layer, a new-type gradient doping structure, in which from GaAs bulk to surface doping concentrations are distributed gradiently from 1×1019 cm-3 to 1×1018 cm-3, was designed. And the new-type GaAs emission layer was prepared into photocathode by (Cs,O) activation technique. The spectral response curves show that compared to common uniform doping GaAs photocathode, the quantum efficiency of gradient doping GaAs photocathode is increased within whole response waveband, with integral sensitivity of 1580 μA/lm, and the photocathode also behaves more stable, which proved that the new-type gradient doping structure is executable and practical, has great potential, and the development of it provides an important approach to development of the national GaAs photocathode with high performance. The inherent reasons why the new-type GaAs photocathode obtained higher quantum efficiency were also discussed.
Keywords:optoelectronics  GaAs photocathode  quantum efficiency  gradient doping  activation  spectral response  integral sensitivity
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