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| 基于GaAs-AlGaAs非对称耦合量子阱材料的半导体弱光开关 | |
| 引用本文： | 苏雪梅,卓仲畅,宁永强,王立军.基于GaAs-AlGaAs非对称耦合量子阱材料的半导体弱光开关[J].光学学报,2002,22(7):70-873. |
| 作者姓名： | 苏雪梅 卓仲畅 宁永强 王立军 |
| 作者单位： | 1. 吉林大学物理系,长春,130023;中国科学院长春光学精密机械与物理研究所,长春,130022 2. 吉林大学物理系,长春,130023 3. 中国科学院长春光学精密机械与物理研究所,长春,130022 |
| 基金项目： | 国家自然科学基金 (19974 0 4 7)，吉林大学青年基金(2 0 0 0A0 4 )资助课题 |
| 摘 要： | 提出了一种基于在GaAs-AlGaAs非对称耦合量子阱材料子带跃迁的量子干涉的半导体弱光开关，分析了驰豫速率γ21对光开关的影响，这种半导体弱光开关是半导体超晶格材料共振隧穿作用导致的子带跃迁的Fano干涉的结果，由于半导体结构与材料可以人为地选择，相干强度可以控制和改变，这种半导体弱光开关比采用原子系统更实用，这也是一种在半导体材料中实现一束光控制另一束光的方法。 |
| 关 键 词： | GaAs－AlGaAs非对称耦合量子阱材料 半导体弱光开关 量子干涉效应 砷化镓 砷铝镓化合物 |
| 收稿时间： | 2001/5/9 |
A Weak Optical Switch in GaAs\|AlGaAs Asymmetric Coupled Quantum Wells |
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| Su Xuemei , Zhuo Zhongchang Ning Yongqiang Wang Lijun.A Weak Optical Switch in GaAs\|AlGaAs Asymmetric Coupled Quantum Wells[J].Acta Optica Sinica,2002,22(7):70-873. | |
| Authors: | Su Xuemei Zhuo Zhongchang Ning Yongqiang Wang Lijun |
| Institution: | Su Xuemei 1),2) Zhuo Zhongchang 1) Ning Yongqiang 2) Wang Lijun 2) 1),Department of Physics,Jilin University,Changchun 130023 2),Changchun Institute of Optics,Fine Mechanics and Physics,The Chinese Academy of Sciences,C |
| Abstract: | A scheme of a weak optical switch in GaAs-AlGaAs asymmetric coupled quantum wells is proposed. The effect of dephasing rate γ 21 on the switch is analysized. The optical switch is induced by Fano interference in coherent effects between inter subbands in superlattices. This weak semiconductor switch is more practical than that of atomic media due to its flexibility for choosing materials and structure dimensions of the utilized heterostructures. This is also a method of controlling one beam by another in semiconductor. |
| Keywords: | coupled quantum wells Fano interference optical switch |
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