50 nm分辨力极端紫外光刻物镜光学性能研究

极端紫外光刻 (EUVL)作为实现 10 0～ 32nm特征尺寸微细加工的优选技术 ,其光刻物镜的光学性能是实现高分辨图形制作的关键。利用光学设计软件CODEV对 6枚非球面反射镜构成的光刻物镜设计和光学性能分析 ,其分辨力可以实现 5 0nm ,曝光面积为 2 6mm× 1mm。结果表明 ,光学性能对曝光场点的依赖关系。在全曝光场中进行了光学性能分析 ,其最大畸变为 3.77nm ,最大波面差为 0 .0 31λ(均方根值 ) ,该缩小投影物镜完全可以满足下一代极端紫外光刻机的性能要求

Optical Performance of Extreme-Ultraviolet Lithography for 50 nm Generation

Extreme-ultraviolet lithography (EUVL) is one of the promising technologies for the fabrication of critical dimension of 100～32 nm. The optical performance of projection optics is most important to realize the fabrication of high resolution pattern. The design of 6-mirror projection optics of extremes-ultraviolet lithography is presented and the optical performance is analyted by using optical design softwave CODE V. The resolution can reach 50 nm and the exposure area is 26 mm×1 mm. The performance of optics depends on the field points of the exposure area. The optical evaluation of optics is completed at full exposure area. The maximum distortion of 3.77 nm and the maximum wavefront error of 0.031λ (root-mean-square) can be reached. This projection optics can fully meet the requirements of EUVL for next generation.