1.55μmSi_(1-x)Ge_x光波导与Si_(1-x)Ge_x/Si多量子阱探测器集成的优化设计

对１．５５μｍ波长的Ｓｉ１－ｘＧｅｘ光波导和Ｓｉ１－ｘＧｅｘ／Ｓｉ多量子阱（ＭＱＷ）红外探测器的集成器件结构进行了系统的分析和优化设计。优化结果为：１）对Ｓｉ１－ｘＧｅｘ光波导，Ｇｅ含量ｘ＝０．０５，脊宽、高和腐蚀深度分别为８、３和２．６μｍ；２）对Ｓｉ１－ｘＧｅｘ／Ｓｉ多量子阱红外探测器，Ｇｅ含量ｘ＝０．５，探测器由厚度为５５０ｎｍ、２３个周期的６ｎｍＳｉ０．５Ｇｅ０．５＋１７ｎｍＳｉ组成，长度约２ｍｍ。结果表明，这种结构器件的内量子效率可达８８％。

Optimizing Design of Si1-xGex Waveguide and Si1-xGex/Si MQW Photodetector for 1.55 μm Operation

A systematic analysis and optimizing design have been conducted for the integration of Si 1-x Ge x optical waveguide and Si 1-x Ge x/Si multiple quantum wells (MQW) infrared detector at λ=1.55 μm operation. The optimizing design results are: (1) For Si 1-x Ge x optical waveguide, Ge content x=0.05. Rib width, height and etched depth of the waveguide are 8, 3 and 2.6 μm, respectively; (2) For Si 1-x Ge x/Si MQW infrared detector, Ge content x=0.5. Total thickness of the detector is 550 nm, which consists of 23 periods 6 nm Si 0.5 Ge 0.5 +17 nm Si. The length of the detector is about 2 mm. The results show that the internal quantum efficiency of such structure devices can be as higher as 88%.