转移基板材质对Si衬底GaN基LED芯片性能的影响

在Si衬底上生长了GaN基LED外延材料,分别转移到新的硅基板和铜基板上,制备了垂直结构蓝光LED芯片。研究了这两种基板GaN基LED芯片的光电性能。在切割成单个芯片之前,对大量尺寸为(300μm×300μm)的这两种芯片分别通高达1 A的大电流在测试台上加速老化1 h。结果显示,铜基板Si衬底GaN基LED芯片有更大的饱和电流,光输出效率更高,工作电压随驱动电流的变化不大,光输出在老化过程中衰减更小。铜基板芯片比硅基板芯片可靠性更高,在大功率半导体照明器件中前景诱人。

Effect of Transferred Ansferred Submount Materials on Properties of GaN-Based LED Chips Grown on Si Substrate

InGaN blue MQW LEDs,grown by metal-organic vapor deposition(MOCVD) on Si(111) substrate,were successfully bonded and transferred onto new substrates Cu and Si.Then,the vertical structure LED chips based on these two kind substrates are made.In the following experiment,the properties of two different GaN LED chips have been tested and researched before the chips were scribed.Current-accelerating aging experiments under 1 A current applied on these chips have been carried out.The results indicate that the chips with Cu substrate are saturated at higher current,having better luminous output efficiency,moreover,its working voltage waved less with driving current,and its power declined less during aging experiments.All these mean that the reliability of chips on Cu substrate is much better.This suggests that the LEDs on Cu substrate have great potential for the application on the high-power LED devices.