| InGaAsP—InP大光腔结构激光器 |
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| 引用本文： | 钟景昌,朱宝仁.InGaAsP—InP大光腔结构激光器[J].光学学报,1990,10(3):06-212. |
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| 作者姓名： | 钟景昌 朱宝仁 |
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| 作者单位： | 长春光学精密机械学院
(钟景昌，朱宝仁)，长春光学精密机械学院(黎荣晖) |
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| 摘 要： | 本文针对影响InGaAsP-InP激光器温度特性的各种因素,设计并制备了大光腔(LOC)结构激光器.实验表明,这种结构改善了激光器的温度稳定性,获得了低阈值(宽接触型器件J_(th)≈2.5kA/cm~2),高功率(脉冲输出3W)和高特征温度(T_o=150K)器件.
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| 关 键 词： | 半导体 大光腔 激光器 |
| 收稿时间： | 1989/7/4 |
High-To InGaAsP semiconductor laser with large optical cavity |
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| ZHONG JINGCHANG,ZHU BAOREN,AND LI RONGHUI.High-To InGaAsP semiconductor laser with large optical cavity[J].Acta Optica Sinica,1990,10(3):06-212. |
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| Authors: | ZHONG JINGCHANG ZHU BAOREN AND LI RONGHUI |
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| Institution: | Changchun College of Optics and Fine Mechanics |
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| Abstract: | A laser with the large optical cavity (LOC) configuration has beed designed and fabricated taking account of the various factors which have an effect on temperature characteristics of the InGaAsP-InP lasers. The experiments show that such a configuration imporves temperature stability of the laser. The devices with lower threshold current (Jth=2.5KA/cm2 for the broad-area contacts), high power (3W in pulsed operation). and high T0 (150K) have been obtained. |
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| Keywords: | semioonduotor laser |
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