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ZrO2薄膜残余应力实验研究
引用本文:邵淑英,范正修,范瑞瑛,邵建达.ZrO2薄膜残余应力实验研究[J].光学学报,2004,24(4):37-441.
作者姓名:邵淑英  范正修  范瑞瑛  邵建达
作者单位:中国科学院上海光学精密机械研究所光学薄膜技术研究与发展中心,上海,201800
摘    要:采用ZYGO MarkⅢ-GPI数字波面干涉仪对电子束蒸发方法制备的ZrO2薄膜中的残余应力进行了研究,讨论了沉积温度、沉积速率等工艺参量对ZrO2薄膜残余应力的影响。实验结果表明:随着沉积温度及沉积速率的升高,ZrO2薄膜中残余应力状态由张应力变为压应力,且压应力值随着沉积温度升高而增大。同时用X射线衍射技术测量分析了不同沉积条件下ZrO2薄膜的微结构组织,探讨了ZrO2薄膜微结构与其应力的对应关系。

关 键 词:二氧化锆薄膜  薄膜物理  残余应力实验  沉积温度  沉积速率  电子束蒸发法  X射线衍射技术
收稿时间:2003/1/3

Study of Residual Stress in ZrO2 Thin Films
Shao Shuying,Fan Zhengxiu,Fan Ruiying,Shao Jianda.Study of Residual Stress in ZrO2 Thin Films[J].Acta Optica Sinica,2004,24(4):37-441.
Authors:Shao Shuying  Fan Zhengxiu  Fan Ruiying  Shao Jianda
Abstract:The residual stress in ZrO 2 films prepared by electron beam evaporation was measured by viewing the substrate deflection using an optical interference method. The influence of deposition temperatures and deposition rates on the residual stress was studied. The results show that residual stress in ZrO 2 films changes from tensile to compressive with the increase of deposition temperature and deposition rate and the value of the compressive stress increase with the increase of deposition temperature. At the same time, the microstructure of the ZrO 2 films was inspected by X-ray diffraction (XRD). The relationship between the residual stress and the microstructure was also discussed.
Keywords:thin film physics  residual stress  ZrO  2 films  deposition temperature  deposition rate
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