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薄膜后栅型SnO_2场发射显示器的制备及性能研究
引用本文:张永爱,林金阳,吴朝兴,郭太良.薄膜后栅型SnO_2场发射显示器的制备及性能研究[J].光学学报,2011(3):247-252.
作者姓名:张永爱  林金阳  吴朝兴  郭太良
作者单位:福州大学物理与信息工程学院;
基金项目:国家863计划(2008AA03A313); 福建省科技厅资助省属高校项目(2008F5001); 福州大学科技发展基金(2008-XY-11)资助课题
摘    要:利用光刻、阳极氧化和剥离技术在玻璃基底制备薄膜后栅型场发射阵列,采用丝网印刷技术将一维SnO2纳米发射材料转移至后栅结构的阴极电极上,借助光学显微镜和扫描电镜观测薄膜后栅型场发射阴极阵列,利用ANSYS软件模拟了不同条件下阴极电极附近电子运动轨迹.结果表明,一维SnO2纳米线在阴极电极衬底上分布均匀,电子束斑随着阳压的...

关 键 词:光电子学  SnO2  薄膜后栅  场发射  模拟  丝网印刷

Fabrication and Characteristics of Film-Under-Gate Field Emission Displays with SnO_2 Emitters
Zhang Yongai Lin Jinyang Wu Chaoxing Guo Tailiang.Fabrication and Characteristics of Film-Under-Gate Field Emission Displays with SnO_2 Emitters[J].Acta Optica Sinica,2011(3):247-252.
Authors:Zhang Yongai Lin Jinyang Wu Chaoxing Guo Tailiang
Institution:Zhang Yongai Lin Jinyang Wu Chaoxing Guo Tailiang(College of Physics and Information Engineering,Fuzhou University,Fuzhou,Fujian 350002,China)
Abstract:The film-under-gate field emission arrays(FEA) are fabricated on the glass substrates by conventional photolithography,anodic oxidation and stripping method.SnO2 emitters are migrated on the cathode of film-under-gate triode by screen printing.The images of film-under-gate FEA with SnO2 emitters are measured by the optical microscopy and scanning electron microscopy(SEM).The electron trajectory in this triode is simulated by ANSYS.It shows that the SnO2 emitters by screen printing are uniformly distributed ...
Keywords:optoelectronics  SnO2 emitters  film-under-gate  field emission  simulation  screen printing  
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