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GaN衬底材料LiGaO2晶体的温度梯度法生长及分析
引用本文:杨卫桥,干福熹,邓佩珍,周永宗,徐军,李抒智,蒋成勇.GaN衬底材料LiGaO2晶体的温度梯度法生长及分析[J].光学学报,2002,22(6):61-764.
作者姓名:杨卫桥  干福熹  邓佩珍  周永宗  徐军  李抒智  蒋成勇
作者单位:中国科学院上海光学精密机械研究所,上海,201800
摘    要:以温度梯度法生产LiGaO2晶体,通过形貌观察、X射线衍射分析和X射线光电子能谱分析确认在样品的中部形成了单一相的LiGaO2晶体。但在生长过程中由于CO气体的存在,熔体表面形成了LiO-和金属态的Ga,钼坩埚被侵蚀形成Li2MoO4进入熔体,使样品上下两部分的结晶质量变差。

关 键 词:衬底材料  LiGaO2晶体  GaN  温度梯度法  氮化镓  晶体生长  晶体分析  锂镓氧化物

Growth of LiGaO2 as a Substrate of GaN by Temperature Gradient Technique
Yang Weiqiao Gan Fuxi Deng Peizhen Zhou Yongzong Xu Jun,Li Shuzhi Jiang Chengyong.Growth of LiGaO2 as a Substrate of GaN by Temperature Gradient Technique[J].Acta Optica Sinica,2002,22(6):61-764.
Authors:Yang Weiqiao Gan Fuxi Deng Peizhen Zhou Yongzong Xu Jun  Li Shuzhi Jiang Chengyong
Abstract:The growth of LiGaO 2 by temperature gradient technique (TGT) is reported. Through topographic observing, X ray diffraction analysis and X ray photoelectron spectroscopy analysis, it is found that the single phase crystal LiGaO 2 is formed in the middle of the sample. Owing to the existence of CO,LiO - and Ga is formed on the surface of melt during growth, then Li 2MoO 4 is formed in the melt due to Mo crucible is eroded by LiO - and Ga, the crystallization degraded at the upper and lower parts of the sample.
Keywords:GaN  LiGaO  2  temperature gradient technique
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