| 光泵浦ZnCdSe／ZnSe单量子阱蓝绿受激发射的研究 |
| |
| 引用本文： | 张希清,范希武.光泵浦ZnCdSe／ZnSe单量子阱蓝绿受激发射的研究[J].光学学报,1997,17(10):398-1402. |
| |
| 作者姓名： | 张希清 范希武 |
| |
| 作者单位： | 中国科学院长春物理研究所激发态物理开放研究实验室，复旦大学应用表面物理国家重点实验室 |
| |
| 基金项目： | 中国博士后基金,国家自然科学基金,上海市博士后基金,中山大学超快速激光光谱学国家重点实验室基金 |
| |
| 摘 要： | 报道了常压金属有机化学汽相淀积（ＭＯＣＶＤ）制备的Ｚｎ０．７Ｃｄ０．３Ｓｅ／ＺｎＳｅ单量子阱的光泵浦受激发射性质。在７７Ｋ下观测到了ｎ＝２的重空穴激子发光峰和ｎ＝１的重空穴激子吸收峰。在７７Ｋ脉冲激光泵浦下受激发射阈值功率密度为１１６ｋｗ／ｃｍ２。认为受激发射机理可能是激子局域态的空间填充。
|
| 关 键 词： | 受激发射 激子 量子阱 锌镉硒 硒化锌 光泵浦 |
| 收稿时间： | 1996/7/3 |
Lasing in ZnCdSe/ZnSe Single Quantum Well Structures with Photopumping |
| |
| Abstract: | A well-defined n=1 heavy-hole exeiton absorption peak from a loealized state and n=2 heavy-hole exeiton emission peak was observed in a ZnCdSe/ZnSe single quantum well structures at 77 K. The localized state was formed by fluctuation of well-barrier interfaces. Stimulated emission was observed from the localized state. The gain originate from exeiton phase space fill of these state. An optical excitation threshold around 116 kW/cm2 was measured. The gain switching was observed. These results were obtained from photoluminescence under oaring excitation power, and luminescence decay experiments. |
| |
| Keywords: | stimulated emission exeiton quantum well |
| 本文献已被 CNKI 维普 等数据库收录！ |
