KrF准分子激光退火氢化非晶碳化硅薄膜的晶化研究

介绍了利用KrF准分子脉冲激光对氢化非晶碳化硅(a-SiC∶H)薄膜进行激光退火以实现薄膜的结晶化。利用等离子增强化学气相沉积(PECVD)在单晶Si(100)衬底上制备a-SiC∶H薄膜, 再用不同能量密度的激光对薄膜样品进行退火。分析表明, 选用合适能量密度的激光退火能够实现a-SiC∶H薄膜的结晶化, 且结晶颗粒大小随着入射激光能量密度的增加而增大; 显微图表明当入射能量密度超过200 mJ/cm2时, 薄膜表面出现由热弹性波引起的表面波纹现象, a-SiC∶H薄膜结晶过程为液相结晶; 傅里叶红外谱(FTIR)表明随着入射能量密度增加, 薄膜中氢含量降低, Si-C峰增强并且峰位出现蓝移, 薄膜的结晶度提高。

Crystallization of Amorphous Hydrogenated SiC Films by KrF Excimer Laser Annealing

Amorphous hydrogenated silicon carbide(a-SiC∶H) films were annealed by KrF excimer laser to realize crystallization. a-SiC∶H films were prepared by plasma enhanced chemical vapor deposition (PECVD) and then irradiated by KrF excimer laser pulses at different power densities. The results indicate that laser annealing at a proper density is an effective way to realize material crystallization, and the crystal size gets bigger as the incident laser power increases. It is observed from the micrograph that when the incident laser power is over 200 mJ/cm2, the phenomena of surface corrugation caused by thermal elastic wave come into being on the surface of films after laser annealing, and a-SiC∶H films are transformed by liquid crystallization. FTIR indicates that the content of hydrogen decreases, the peak of Si-C enhances and blue shift occurs, all of which imply the crystallization of a-SiC∶H films improves.