| In组分对InGaN/GaN蓝光LED的发光性质的影响 |
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| 引用本文： | 崔苗,周桃飞,张锦平,黄小辉.In组分对InGaN/GaN蓝光LED的发光性质的影响[J].光学学报,2011(10):158-163. |
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| 作者姓名： | 崔苗 周桃飞 张锦平 黄小辉 |
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| 作者单位： | 中国科学院苏州纳米技术与纳米仿生研究所;中国科学院半导体研究所; |
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| 基金项目： | 国家自然科学基金(50902099)资助课题 |
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| 摘 要： | 利用扫描透射电子显微术(STEM)和变温光致发光光谱(PL)研究了In组分对InGaN/GaN蓝光LED的发光的影响.STEM发现两个样品量子阱结构相同,低温PL显示低In组分的样品的发光峰位随着温度的升高呈现出经典S(Red-Blue-Red)曲线.目前普遍认为蓝移是In组分分布不均匀造成的局域激子发光的主要原因,然...
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| 关 键 词： | 材料 InGaN/GaN 扫描透射电子显微术 光致发光光谱 带填充 |
Influence of In Fraction on the Optical Properties of InGaN/GaN Blue Light-Emitting Diodes |
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| Cui Miao, Zhou Taofei Zhang Jinping Huang Xiaohui,Chinese Academy of Sciences,Suzhou,Jiangsu ,China Institute of Semiconductors,Beijing ,China.Influence of In Fraction on the Optical Properties of InGaN/GaN Blue Light-Emitting Diodes[J].Acta Optica Sinica,2011(10):158-163. |
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| Authors: | Cui Miao Zhou Taofei Zhang Jinping Huang Xiaohui Chinese Academy of Sciences Suzhou Jiangsu China Institute of Semiconductors Beijing China |
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| Institution: | Cui Miao1,2 Zhou Taofei1 Zhang Jinping1 Huang Xiaohui2(1Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences,Suzhou,Jiangsu 215125,China 3Institute of Semiconductors,Beijing 100083,China) |
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| Abstract: | Scanning transmission electron microscopy(STEM) and temperature dependent photoluminescence(PL) measurement are used to study the influence of In fraction on the optical properties of InGaN/ GaN blue light-emitting diode(LED).STEM results reveal that both of two samples have the same quantum-well structure.Low-temperature dependence of PL shows that the peak energy of one sample with lower In fraction exhibites a classical S type(Red-Blue-Red) with increasing temperature.Currently it is recommended that the... |
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| Keywords: | materials InGaN/GaN scanning transmission electron microscopy photoluminescence band filling |
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