沉积工艺对二氧化锆薄膜生长特性影响的研究

利用反应离子束溅射、反应磁控溅射和电子束蒸发在K9基底上沉积ZrO2薄膜，并用原子力显微镜对薄膜表面形貌进行测量。通过数值相关运算，对不同工艺条件下薄膜生长界面进行定量描述，得到了薄膜表面的粗糙度指数、横向相关长度、标准偏差粗糙度等参量。由于沉积条件的不同，薄膜生长具有不同的动力学过程。在反应离子束溅射和反应磁控溅射沉积薄膜过程中，薄膜生长动力学行为均可用Kuramoto-Sivashinsky方程来描述，电子束蒸发制备薄膜的过程可以用Mullins扩散模型来描述，并发现在沉积薄膜过程中基底温度和沉积过程的稳定性对薄膜表面特征影响很大。

Morphology Analysis and Growth Mechanism of Zirconium Dioxide Thin Films

ZrO2 thin films were prepared on BK7 substrates by ion beam reactive sputtering, magnetron reactive sputtering and electron beam evaporation, respectively. The surface morphology was studied using atomic force microscopy (AFM). The roughness exponent α, the lateral correlation length ζ and the interface width w were obtained by numerical correlation calculation, in which the value of roughness exponent of the films was measured to be 0.61, 0.81 and 0.9, respectively. The mechanism of film growth is different under different conditions. In the case of ion beam reactive sputtering and magnetron reactive sputtering, the interfaces of films are determined by stochastic deposition, desorption and diffusion effect of atom or atomic clusters on the interface. The sputtering growth process can be described by a noisy Kuramoto Sivashinsky equation. But for electron beam evaporation, desorption effect of atom or atomic clusters can be neglected, then the dynamic behavior of growth may be described by Mulliins diffusion model. It was also found that the temperature of substrates had great effect on the morphology of grown interface during the deposition of films.