首页 | 本学科首页   官方微博 | 高级检索  
     检索      

硅微ZnO压电薄膜传声器的研制
引用本文:杨楚威,黄歆,李俊红,解述,魏建辉,马军,汪承灏.硅微ZnO压电薄膜传声器的研制[J].应用声学,2003,22(5):1-4.
作者姓名:杨楚威  黄歆  李俊红  解述  魏建辉  马军  汪承灏
作者单位:中国科学院声学研究所,北京,100080
摘    要:本文介绍了一种利用ZnO压电薄膜为换能器的硅微压电薄膜传声器的制备,并且对微机械加工工艺过程进行了较为详细的描述。本文对传声器的部分结构进行改进,与通常设计相比较大幅提高了传声器的性能,1000Hz基准频率的灵敏度达到-85dB(相对于1V/Pa),500Hz到10000Hz的频率响应的平坦度在±3dB范围内。

关 键 词:硅微压电薄膜传声器  换能器  ZnO  微机械加工工艺  性能  频率  灵敏度  平坦度  微机电系统
修稿时间:2002年11月26

Silicon based ZnO piezoelectric film micromachined microphone
YANG Chuwei,HUANG Xin,LI Junhong,XIE Shu,WEI Jianhui,MA Jun and WANG Chenghao.Silicon based ZnO piezoelectric film micromachined microphone[J].Applied Acoustics,2003,22(5):1-4.
Authors:YANG Chuwei  HUANG Xin  LI Junhong  XIE Shu  WEI Jianhui  MA Jun and WANG Chenghao
Institution:Institute of Acoustics, Chinese Academy of Science, Beijing 100080;Institute of Acoustics, Chinese Academy of Science, Beijing 100080;Institute of Acoustics, Chinese Academy of Science, Beijing 100080;Institute of Acoustics, Chinese Academy of Science, Beijing 100080;Institute of Acoustics, Chinese Academy of Science, Beijing 100080;Institute of Acoustics, Chinese Academy of Science, Beijing 100080;Institute of Acoustics, Chinese Academy of Science, Beijing 100080
Abstract:This paper presents the fabrication of a silicon based ZnO piezoelectric film microphone. Micromachining techniques to fabricate the device are described in detail. The structure of this microphone has been modified from our earlier version one, the performance of the device is improved. The sensitivity at the standard frequency (1000Hz) is -85dB (ref. IV/Pa). The flatness of its frequency response from 500Hz to 10000Hz is ±3dB.
Keywords:ZnO  Silicon microphone  Piezoelectric film  MEMS
本文献已被 CNKI 万方数据 等数据库收录!
点击此处可从《应用声学》浏览原始摘要信息
点击此处可从《应用声学》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号