| TiO2/SiO2的表面化学修饰及其DRS和Raman光谱分析 |
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| 引用本文： | 桑丽霞,钟顺和,马重芳.TiO2/SiO2的表面化学修饰及其DRS和Raman光谱分析[J].光谱学与光谱分析,2007,27(4):720-724. |
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| 作者姓名： | 桑丽霞 钟顺和 马重芳 |
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| 作者单位： | 1. 北京工业大学环境与能源工程学院,教育部"传热强化与过程节能"重点实验室,北京市"传热与能源利用"重点实验室,北京,100022
2. 天津大学化工学院,天津,300072 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)
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国家重点基础研究发展计划(973计划) |
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| 摘 要： | 以氯化醇钛盐表面反应法制备系列TiO2/SiO2,根据XRD,Raman和DRS表征分析,载体表面具有分子级分散的锐钛矿型TiO2微晶粒子和非晶TiOx物种.与本体TiO2相比,TiO2/SiO2的吸收带边显著蓝移,能隙增大为3.96 eV.当金属M(M:Pd,Cu和Ni)负载于TiO2/SiO2表面,可使其光吸收域扩展到可见光区,并引起吸收带边红移.相对Pd的负载,Cu,Ni的负载对TiO2/SiO2的LMCT带影响更大,其中Cu-TiO2/SiO2的能隙减小为3.68 eV.当金属氧化物MoO3负载于TiO2/SiO2上时,可以调变TiO2/SiO2的吸收带边并增强对可见光的吸收;随MoO3载量的增加,表面物种的相互作用增强,形成Mo-O-Ti复合结构,增强了LMCT带的吸收强度,并使能隙减小为3.81 eV.
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| 关 键 词： | TiO2/SiO2 表面改性 能隙 吸光特性 DRS |
| 文章编号： | 1000-0593（2007）04-0720-05 |
| 收稿时间： | 2006-01-16 |
| 修稿时间： | 2006-05-06 |
The Study on DRS and Raman Spectroscopy of Surface Modified TiO2/SiO2 |
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| SANG Li-xia,ZHONG Shun-he,MA Chong-fang.The Study on DRS and Raman Spectroscopy of Surface Modified TiO2/SiO2[J].Spectroscopy and Spectral Analysis,2007,27(4):720-724. |
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| Authors: | SANG Li-xia ZHONG Shun-he MA Chong-fang |
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| Institution: | 1. Key Laboratory of Enhanced Heat Transfer and Energy Conservation, Ministry of Education and Key Laboratory of Heat Transfer and Energy Conversion, Beijing Education Commission, Beijing University of Technology, Beijing 100022, China 2. College of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China |
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| Abstract: | TiO2 /SiO2 were prepared by surface reaction of silica with an acetone solution of Ti(i-OC3H7)nCl(4-n), where n = 0-2. Results of XRD, Raman and UV-Vis DRS showed that two types of Ti species, small particles of anatase-type TiO2 and non-crystalline TiO(x) species, are molecularly dispersed on the silica surface. Relative to the TiO2 bulk, a blue-shift in the bandgap adsorption edge of TiO2/SiO2 was observed due to the quantum size effects. The bandgap energy (E(g)) of TiO2/SiO2 is 3.96 eV. When M(Pd, Cu, Ni) is deposited on TiO2/SiO2, the adsorption spectra extend to visible light region and the bandgap adsorption edge red shifts with respect to TiO2/SiO2. Compared with that of Pd, the deposition of Cu and Ni on TiO2/SiO2 has more effects on LMCT transition (O2- --> Ti4+) of Ti atoms. And the bandgap energy of Cu-TiO2 /SiO2 decreases to 3.69 eV. Similarly, the photon adsorption property for visible light can be improved relatively by the incorporation of MoO3 on TiO2/SiO2, At higher MoO3 loadings, the Mo-O-Ti coupled structure can be formed through the interaction between MoO3 and TiO2, which made the bandgap energy decrease to 3.81 eV. |
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| Keywords: | TiO2/SiO2 Surface modification Bandgap energy Photon adsorption property DRS |
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