首页 | 本学科首页   官方微博 | 高级检索  
     检索      

ICP-AES研究纳米TiO2材料对Ga, In, Tl的吸附性能
引用本文:杭义萍,秦永超,江祖成,胡斌.ICP-AES研究纳米TiO2材料对Ga, In, Tl的吸附性能[J].光谱学与光谱分析,2005,25(7):1131-1134.
作者姓名:杭义萍  秦永超  江祖成  胡斌
作者单位:1. 武汉大学化学与分子科学学院,湖北,武汉,430072;华南理工大学应用化学系,广东,广州510640
2. 武汉大学化学与分子科学学院,湖北,武汉,430072
摘    要:研究了纳米TiO2材料对Ga,In,Tl的吸附性能,考察了吸附动力学、最佳酸度、富集倍数和吸附容量,确定了待测金属离子的最佳吸附条件。实验结果表明:在最佳pH条件下,Ga,In,Tl能定量、快速地被吸附在纳米TiO2材料上;其静态吸附容量为:Ga48·6mg·g-1,In46·6mg·g-1和Tl23·4mg·g-1;被吸附在纳米TiO2上的金属离子能采用0·1mol·L-1EDTA 1·0mol·L-1HNO3混合溶液定量洗脱,其回收率均大于92%。当富集倍数为12·5时,本法对Ga(Ⅲ),In(Ⅲ),Tl(Ⅰ)的检出限分别为3·0,6·0,13ng·mL-1。计算了相应的相对标准偏差(RSD%)分别为1·85%,1·96%,3·40%,该方法已成功地应用于地质样品中痕量Ga(Ⅲ),In(Ⅲ),Tl(Ⅰ)的测定,结果满意。

关 键 词:纳米二氧化钛  吸附  ICP-AES  Ga  In  Tl  分离富集
文章编号:1000-0593(2005)07-1131-04
收稿时间:12 22 2003 12:00AM
修稿时间:2003年12月22

Study on the Adsorption Behavior of Ga, In and Tl on Nanometer-Size Titanium Dioxide by ICP-AES
HANG Yi-ping,QIN Yong-chao,JIANG Zu-cheng,HU Bin.Study on the Adsorption Behavior of Ga, In and Tl on Nanometer-Size Titanium Dioxide by ICP-AES[J].Spectroscopy and Spectral Analysis,2005,25(7):1131-1134.
Authors:HANG Yi-ping  QIN Yong-chao  JIANG Zu-cheng  HU Bin
Institution:Wuhan University, College of Chemistry and Molecular Science, Wuhan 430072, China.
Abstract:The adsorption behavior of nanometer TiO2 towards Gallium (Ga) Indium (In) and Thallium (Tl) was investigated with inductively coupled plasma atomic emission spectrometry (ICP-AES). The optimum conditions for adsorption were studied in detail, and the test included sorption kinetics, effect of pH on adsorption ratio, enrichment factor, and adsorption capacity. Under the optimum conditions, Ga (III), In(III) and Tl(I) ions could be adsorbed and recovered quantitatively. The static adsorption capacities of Ga(III), In(III) and Tl(I) on nanometer TiO2 were 48.6, 46.6 and 23.4 mg x g(-1) respectively. For the elution of Ga(III), In (III) and Tl(I), a mixture of 0.1 mol x L(-1) EDTA solution and 1.0 mol x L(-1) HNO3 was used, and the recovery ratio was above 92%. According to the definition of IUPAC, the detection limits (3sigma) of this method for Ga, In and Tl with an enrichment factor of 12.5 are 3.0, 6.0 and 13 ng x mL(-1), respectively; and relative standard deviations (RSD) are 1.85%, 1.96% and 3.4%, respectively (n = 6). The proposed method has been applied successfully to the analysis of geological samples with satisfactory results.
Keywords:Nanometer TiO_2  Adsorption  ICP-AES  Gallium  Indium  Thallium  Separation/preconcentration
本文献已被 CNKI 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号