Ni掺杂ZnO薄膜的荧光特性

采用脉冲激光沉积技术(PLD)在单晶Si 衬底上制备了Ni掺杂的ZnO薄膜，通过VARAIN Cary-Eclips 500型荧光光谱仪研究了样品的荧光特性。观察到360和380 nm左右2个荧光峰。通过Ni掺杂，研究了360 nm左右荧光峰的起源。结果表明，随着靶材中Ni掺杂量的不同，荧光峰峰位不变，而相应的发光强度发生了明显的变化。当靶材中Ni∶ZnO的摩尔比X_s为5％时，样品中360 nm紫外荧光峰的发光强度最佳，表明360 nm左右荧光峰并不是重掺杂后杂质能级深入到导带的结果，有可能是起源于分裂的价带与导带间的复合跃迁。

Fluorescence Emission Properties of Ni-Doped ZnO Films

Ni-doped ZnO films were deposited on Si(100) by pulsed laser deposition(PLD) at room temperature. Fluorescence emission properties of the films were measured using VARAIN Cary-Eclips 500 fluorescence spectrum analyzer. Two peaks centered respectively at about 360 and 380 nm were observed. The origin of the ultraviolet peak at 360 nm was investigated through doping Ni into the ZnO films. It was found that the intensity of this ultraviolet peak changed with Ni content while its position remained stable. The fluorescence emission of the samples was optimal when Ni:ZnO was 5 mol%, indicating that the peak centered at 360 nm might originate from the composite transition between the splitting valence band and conduction band, not from the entrance of the impurity energy level into the conduction band after doping.