电子助进化学气相沉积金刚石中的光发射谱特性

采用蒙特卡罗方法，对以CH₄/H₂为源料气体的电子助进化学气相沉积(EACVD)金刚石中的氢原子(H_α, H_β, H_γ)、碳原子C(2p3s2p2∶λ=165.7 nm)以及CH(A2Δ→X2Π∶λ=420～440 nm)的光发射过程进行了模拟，气体温度随空间的变化采用温度梯度变化，研究了不同反应室气压及衬底温度下的光发射谱特性。结果表明，不同衬底温度下各谱线强度均随气压的增大先增大后减小； 当气压较低时，谱线强度随衬底温度的增大而减少,而气压较高时，谱线强度随衬底温度的增大而增大。

Characteristic of Optical Emission Spectrum in Electron-Assisted Chemical Vapor Deposition of Diamond

The optical emission process of atomic hydrogen (Halpha, Hbeta, Hgamma), atomic carbon C(2p3s2p2 : lambda = 165.7 nm) and radical CH(A2delta --> X2II: lambda = 420-440 nm) in diamond film growth by electron-assisted chemical vapor deposition (EACVD) from a gas mixture of CH4 and H2 was studied by using Monte-Carlo simulation. The variation of the emission lines with gas pressure (0.1-12.5 kPa) of different substrate temperatures (573-1 173 K) was investigated. And the results show that at different substrate temperatures the intensity of all the emission lines increase with increasing gas pressure at first, whereas decreased afterward. Furthermore, the emission lines intensity decreases with increasing substrate temperature at a relative low gas pressure, while increases with increasing substrate temperature at the higher gas pressure.