| 半导体硅原材料及辅助材料中杂质的ICP－AES测定 |
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| 引用本文： | 王春梅,张淑珍,吴琼,朱春富.半导体硅原材料及辅助材料中杂质的ICP－AES测定[J].光谱学与光谱分析,1995(2). |
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| 作者姓名： | 王春梅 张淑珍 吴琼 朱春富 |
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| 作者单位： | 电子工业部第４６研究所 |
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| 摘 要： | 本文采用电感耦合等离子体发射光谱对半导体硅原材料及辅助材料中的杂质分析进行了研究。着重研究了提升量对信背比的影响和残留硅对杂质元素的干扰影响，最后采用ＩＣＰ－ＡＥＳ对化学法提纯前的原料（石英砂）、拉制单晶用的辅助材料（硅粉）和拉制单晶过程中采用的石英坩埚中的杂质含量进行了分析。
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| 关 键 词： | 硅，ICP－AES，杂质 |
DETERMINATION OF IMPURITIES IN ORIGINAL MATERIALS OF SEMICONDUCTIVE SILICON BY ICPAES |
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| WANG Chunmei, ZHANG Shuzhen, WU Qiong and ZHU Chunfu.DETERMINATION OF IMPURITIES IN ORIGINAL MATERIALS OF SEMICONDUCTIVE SILICON BY ICPAES[J].Spectroscopy and Spectral Analysis,1995(2). |
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| Authors: | WANG Chunmei ZHANG Shuzhen WU Qiong and ZHU Chunfu |
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| Abstract: | A method for the determination of impurities in original materials of semiconductive silicon by ICP-AES was studied. Due to its fast analysis speed, this method could meet the requirements and provide analytical result in a shorter time. |
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| Keywords: | Silicon ICP-AES Impurities |
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