氢原子谱线与高质量金刚石薄膜

采用蒙特卡罗方法，对以CH₄/H₂混合气体为源气体的电子助进热丝化学气相沉积(EACVD)中的氢原子发射过程进行了模拟。在模拟中考虑了电子与H₂的弹性碰撞及振动激发、分解、电子激发(包括H_α, H_β, H_γ谱线的激发)、电离及分解电离等非弹性碰撞过程;与CH₄的碰撞考虑了弹性动量传输及振动激发、分解、电子激发、分解激发(包括H_α, H_β, H_γ谱线的激发)、电离及分解电离等非弹性碰撞过程。研究了不同实验条件下产生的H, CH₃的数目与氢原子谱线相对强度的关系，给出了一种利用氢原子谱线来获得最佳成膜实验条件的方法。对于有效控制工艺条件，生长出高质量的金刚石薄膜具有重要意义。

Atomic Hydrogen Emission Line and the High Quality Diamond Film

The process of atomic hydrogen emission in CH4/H2 gas mixture in EACVD is simulated by Monte Carlo method. In the simulation two basic types of collision between electron and H2 molecule are considered: elastic collision and inelastic collision. Four types of inelastic processes have been considered, namely vibrational excitation, dissociation, electron excitation (contains Halpha, Hbeta and Hgamma) and ionization. For e-CH4 collision, elastic momentum transfer, vibrational excitation, dissociation, dissociative excitation (contains Halpha, Hbeta and Hgamma), ionization and dissociative ionization are considered. The relationship between the number of H, CH3 and the ratio of atomic hydrogen emission line intensity under different experimental conditions is investigated. A method to obtain the optimum experimental condition for diamond deposition by the atomic hydrogen emission line is given. The result is of great importance to depositing high quality diamond films by controlling the conditions of technology efficiently.