首页 | 本学科首页   官方微博 | 高级检索  
     检索      

ZnO胶体的可见发射和表面修饰特性
引用本文:吕树臣,宋国利,张家骅,宋宏伟,黄世华.ZnO胶体的可见发射和表面修饰特性[J].光谱学与光谱分析,2003,23(6):1049-1052.
作者姓名:吕树臣  宋国利  张家骅  宋宏伟  黄世华
作者单位:1. 湛江师范学院应用物理研究中心,广东,湛江,524048;中国科学院长春光学精密机械与物理研究所激发态物理实验室,吉林,长春,30021
2. 哈尔滨师范大学物理系,黑龙江,哈尔滨,150080
3. 中国科学院长春光学精密机械与物理研究所激发态物理实验室,吉林,长春,30021
摘    要:利用化学方法在常温下成功地制备了ZnO胶体,颗粒尺寸在5nm以下,其量子限域效应十分明显。通过跟踪测试样品的吸收谱,估价了带边吸收与胶体颗粒大小的关系,并研究了随着胶体颗粒的长大,可见发射强度的变化。通过添加表面活性剂,使粒子的表面得到修饰,从而增强了紫外发射。同时对可见发射机制进行了探讨,指出绿带发射至少部分是来自表面浅陷阱(如单离子氧空位)电子到深陷阱空穴的跃迁。

关 键 词:半导体  纳米粒子  量子尺寸效应  发光
文章编号:1000-0593(2003)06-1049-04
修稿时间:2002年6月19日

Visible Luminescence and Surface Modified Properties of ZnO Colloids
LU Shu-chen,SONG Guo-li,ZHANG Jia-hua,SONG Hong-wei,HUANG Shi-hua Appied Physics Center,Zhanjiang Normal College,Zhanjiang ,China.Visible Luminescence and Surface Modified Properties of ZnO Colloids[J].Spectroscopy and Spectral Analysis,2003,23(6):1049-1052.
Authors:LU Shu-chen  SONG Guo-li  ZHANG Jia-hua  SONG Hong-wei  HUANG Shi-hua Appied Physics Center  Zhanjiang Normal College  Zhanjiang  China
Institution:LU Shu-chen,SONG Guo-li,ZHANG Jia-hua,SONG Hong-wei,HUANG Shi-hua Appied Physics Center,Zhanjiang Normal College,Zhanjiang 524048,China Department of Physics,Harbin Normal College,Harbin 150080,China Laboratory of Excited State Processes of Chinese Academy of Sciences,Changchun Institute of Optics & Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130021,China
Abstract:ZnO colloids were prepared at room temperature by chemical method. The mean size of the particles was less than 5 nm and the quantum confinement effect was very appreciable. The absorption band edge on the size of the particles was given by measuring the absorption spectrum of ZnO colloids as the reaction time was increased. The visible emission intensity was also studied as the size of the particles was increased. By adding surfactant to the ZnO colloidal solution, the UV emission was increased due to the surface modification. The mechanism behind the visible luminescence was discussed and attributed to the transition from the shallower surface trapped electrons to the inner deeper trapped holes.
Keywords:Semiconductors  Nanoparticles  Quantum size effects  Luminescence  
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号