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Ni3V2O8催化性能与X射线光电子能谱分析
引用本文:徐爱菊,照日格图,贾美林,林勤.Ni3V2O8催化性能与X射线光电子能谱分析[J].光谱学与光谱分析,2007,27(10):2134-2138.
作者姓名:徐爱菊  照日格图  贾美林  林勤
作者单位:1. 北京科技大学冶金与生态工程学院,北京,100083;内蒙古师范大学化学与环境科学学院,内蒙古,呼和浩特,010022
2. 内蒙古师范大学化学与环境科学学院,内蒙古,呼和浩特,010022
3. 北京科技大学冶金与生态工程学院,北京,100083
摘    要:文章采用微波加热,草酸盐共沉淀法制备了Ni3V2O8催化剂,并对催化剂进行了BET,XRD,H2-TPR,XPS,TEM和电导等技术表征,分析研究了Ni3V2O8催化剂的丙烷氧化脱氢(ODH)制丙烯催化性能与其表面物种的关系.XRD,TEM和电导实验结果表明本方法制得的Ni3V2O8催化剂晶粒均匀,平均粒径为30 nm,具有p-型半导体性质.TPR和XPS实验结果显示Ni3V2O8催化剂中,晶格氧可以较容易转换成未完全还原氧,使催化剂内各种价态的钒之间易于进行氧化还原反应并形成氧缺位,从而催化剂的表面含有较多未充分还原氧物种O-和V4 物种.催化活性结果显示当丙烷的转化率为18.60%,丙烯选择性达到60.02%,在相同转化率条件下,比文献报道的NiO和Ni3V2O8共存催化体系中的丙烯选择性高,说明Ni3V2O8催化剂中存在未充分还原的O-和V4 物种有利于提高丙烯的选择性.

关 键 词:Ni3V2O8  XPS  氧物种  氧化脱氢  p-型半导体
文章编号:1000-0593(2007)10-2134-05
修稿时间:2007-01-12

Study on Performance of Ni3V2O8 Catalyst and Analysis of X-Ray Photoelectron Spectroscopy
XU Ai-ju,ZHAORIGETU Bao,JIA Mei-lin,LIN Qin.Study on Performance of Ni3V2O8 Catalyst and Analysis of X-Ray Photoelectron Spectroscopy[J].Spectroscopy and Spectral Analysis,2007,27(10):2134-2138.
Authors:XU Ai-ju  ZHAORIGETU Bao  JIA Mei-lin  LIN Qin
Institution:1. School of Metallurgical and Ecological Engineering, University of Science Technology Beijing, Beijing 100083, China; 2. College of Chemistry and Environmental Science, Inner Mongolia Normal University, Huhhot 010022, China
Abstract:Ni3V2O8 catalyst was prepared by oxalate co-precipitation method with microwave heating in this paper. In order to study the relationship between the catalytic performance and the surface species, the catalyst was characterized by XRD, BET, H2-TPR, XPS, TEM and conductivity measurement. The surface property of Ni3V2O8 was studied by XPS and the catalytic performance of the oxidative dehydrogenation of propane to propylene was also investigated. The results of XRD showedthat pure Ni3V2O8 with nice structure was obtained. TEM experiments results demonstrated that the prepared Ni3V2O8 catalyst at 700 degrees C calcination showed uniform particle with the mean particle size of 30 nm. The surface area of the catalyst was 8.623 m2 x g(-1). The diagram of the relationship between electrical conductivity and oxygen partial pressure of Ni3V2O8 showed dsigma/dPO2, >0, implying that Ni3V2O8 catalyst was a p-type semiconductor. H2-TPR results showed that only one unsymmetrical reduction peak appeared at 663.5 degreesC within 300-900 degrees C region over Ni3V2O8 catalyst and no obvious shoulder peak was observed. It could also be found that the ratio of non complete reduction oxygen species was about 33.59% (O(-) 27.55%, O2(2-) 6.04%) from the O(1s) XPS result and more V4+ species existed on the Ni3V2O8 catalyst surface. The TPR and XPS results illustrated that the transformation of the lattice oxygen to non-complete reduction oxygen in NiV2O8 catalyst might promote the oxidation-reduction reaction between different valence vanadium and promoted the oxygen vacancy formation. This then led to abundant non-complete reduction oxygen O(-) and V4+ species formation on the surface of Ni3V2O8 catalyst. The active result of oxidative dehydrogenation of propane to propylene showed that the 60.02% propylene selectivity could be reached at 18.60% propane conversion. Compared with the reported results over the coexistent NiO and Ni3V2O8 system from the literature, pure Ni3V2O8 catalyst system in this present paper showed higher propylene selectivity than the coexistent NiO and Ni3V2O8 system under the same propane conversion condition, suggesting that the performance of propane to propene is correlated to the oxidation-reduction of V4+ / V5+ couple and non complete reduction oxygen species (O(-) or O2(2-)). This result further illustrated that NiV2O8 was active phase for oxidative dehydrogenation of propane to propylene. Combining the active and characterization results, it was found that catalytic activity was correlated to the surface non-complete reduction O(-) and V4+ species, which was beneficial to improving the propylene selectivity.
Keywords:Ni3V2O8  X-ray photoelectron spectroscopy(XPS)  Oxygen species  Oxidative dehydrogenation(ODH)  p-type semiconductor
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