ZnTe（ZnTe：Cu）多晶薄膜的XPS研究

用共蒸发法在室温下制备了ZnTe及ZnTe：Cu多晶薄膜，测量了电导率温度曲线，发现不掺杂的ZnTe薄膜的暗电导随温度的增加而线形增加，呈常规的半导体材料特征；掺Cu的ZnTe薄膜在温度较低时，lnσ随温度升高而缓慢增加，随后缓慢降低，达到一极小值，当温度继续升高时又陡然增加，呈现异常现象。用XPS研究了N2气氛下退火前后表面状态，发现不掺Cu的ZnTe薄膜呈现富Te现象。掺Cu后Te氧化明显，以ZnTe形式存在的Te明显减少；ZnTe：Cu薄膜中Zn的含量在退火前后变化明显，退火前，Zn主要以ZnTe形式存在，退火后Zn原子向表面扩散，使表面成分更加均匀，谱峰变宽；退火时，部分Cu原子进入晶格形成CuxTe相，引起载流子浓度变化，导致ZnTe：Cu多晶薄膜的电导温度关系异常。

Study on ZnTe (Znte:Cu) polycrystalline films by XPS]

ZnTe and ZnTe: Cu polycrystalline films were fabricated by means of co-evaporating at room temperature. The relationships between conductivity of the films and temperature were measured. Chemical compositions of ZnTe and ZnTe: Cu polycrystalline films were obtained by using XPS, and the changes of chemical composition before and after anneal were analyzed. The results showed that the conductivity of ZnTe rose linearly with the temperature, and Te was enriched on the margin of every sample's surface; With the rise in temperature, the conductivity of ZnTe: Cu films became abnormal, the oxidization of Te became very obvious and Zn diffused from the bulk to the surface. The composition became more uniform and all peaks became stronger. Carrier concentration caused by CuxTe appeared, resulting in the abnormal relationship between conductivity of the films and temperature.