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PTCDA/ITO表面和界面的X射线光电子能谱分析
引用本文:欧谷平,宋珍,桂文明,张福甲.PTCDA/ITO表面和界面的X射线光电子能谱分析[J].光谱学与光谱分析,2006,26(4):753-756.
作者姓名:欧谷平  宋珍  桂文明  张福甲
作者单位:1. 兰州大学物理科学与技术学院,甘肃,兰州,730000;湖南科技大学物理学院,湖南,湘潭,411201
2. 北京机械工业学院基础部,北京,100085
3. 兰州大学物理科学与技术学院,甘肃,兰州,730000
基金项目:中国科学院资助项目 , 国家自然科学基金
摘    要:利用X射线光电子能谱对PTCDA/p-Si有机/无机光电探测器中PTCDA/ITO表面和界面进行了测试分析. 结果表明, 苝环上的C原子的结合能为284.6 eV, 酸酐中的C原子的结合能为288.7 eV, 并存在来源于ITO膜中的氧对C原子的氧化现象, 界面处C(1s)谱中较高结合能峰消失, 且峰值向低结合能发生化学位移;CO键中O原子的结合能为531.5 eV, C-O-C键中的O原子的结合能为533.4 eV.

关 键 词:表面及界面  X光电子能谱(XPS)  PTCDA/ITO
文章编号:1000-0593(2006)04-0753-04
收稿时间:2004-12-18
修稿时间:2005-05-26

Surface and Interface Analysis of PTCDA/ITO Using X-Ray Photoelectron Spectroscopy (XPS)
OU Gu-ping,SONG Zhen,GUI Wen-ming,ZHANG Fu-jia.Surface and Interface Analysis of PTCDA/ITO Using X-Ray Photoelectron Spectroscopy (XPS)[J].Spectroscopy and Spectral Analysis,2006,26(4):753-756.
Authors:OU Gu-ping  SONG Zhen  GUI Wen-ming  ZHANG Fu-jia
Institution:1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China ;2. School of Physics, Hunan University of Science and Technology, Xiangtan 411201, China; 3. School of Basic Courses, Beijing Institute of Machinery, Beijing 100085, China
Abstract:X-ray photoelectron spectroscopy (XPS) of surface and interface of PTCDA/ITO in PTCDA/p-Si organic-on-inorganic photoelectric detector was investigated. From C1s fine spectrum we found that the binding energy of C atoms in perylene rings was 284.6 eV; and the binding energy of C atoms in acid radical was 288.7 eV; moreover, some C atoms were oxidized by O atoms from ITO. The binding energy of O atoms in C=O bonds and C-O-C bonds was 531.5 and 533.4 eV, respectively. At the interface, the peak of high binding energy in C1s spectrum disappeared, and the main peak shifted toward lower binding energy.
Keywords:Surface and interface  X-ray photoelectron spectroscopy(XPS)  PTCDA/ITO
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