| 硅刻蚀现场研究的表面拉曼光谱技术 |
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| 引用本文： | 刘峰名,任斌,田中群.硅刻蚀现场研究的表面拉曼光谱技术[J].光谱学与光谱分析,2000,20(6):833-835. |
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| 作者姓名： | 刘峰名 任斌 田中群 |
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| 作者单位： | 厦门大学化学系,固体表面物理化学国家重点实验室,物理化学研究所,厦门,361005 |
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| 基金项目： | 国家自然科学基金委资助，国家教育部资助项目!(No 2 990 30 0 9，2 962 530 6，991 77) |
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| 摘 要： | 通过对拉曼谱仪和电极粗糙方法的优化，本文将表面拉曼光谱技术拓宽到了半导体硅电极表面的现场研究，文中观测了不同粗糙时间对硅刻蚀的影响，并实时考察了硅氢表面在开路电位下的氧化过程，实验结果表明，在以ＨＦ为主的湿法刻蚀中，硅表面的悬挂键主要被Ｈ而不是被Ｆ取代。
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| 关 键 词： | 显微拉曼光谱 表面氧化 硅 半导体 刻蚀 |
Surface Ramam Spectrpscopy for in Situ Investigating Silicon Etching Process |
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| Fengming LIU,Bin REN,Zhongqun TIAN.Surface Ramam Spectrpscopy for in Situ Investigating Silicon Etching Process[J].Spectroscopy and Spectral Analysis,2000,20(6):833-835. |
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| Authors: | Fengming LIU Bin REN Zhongqun TIAN |
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| Institution: | Department of Chemistry, State Key Laboratory for Physical Chemistry of Solid Surfaces, Institute of Physical Chemistry, Xiamen University, 361005 Xiamen. |
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| Abstract: | In situ surface Raman spectroscopy has been extended to study silicon electrode surfaces by optimizing the Raman system and the surface roughening method. The time dependent etching processes were monitored in a dilute HF aqueous solution and the initial oxidation processes of the hydrogen-terminated surface in different pHs were studied at the open circuit potential. The results indicate that the silicon surface could be overwhelmingly terminated with hydrogen rather than fluorine in the HF based solution. The smoothening effect of OH - on the silicon surface is through the attack of the =SiH 2 site. It demonstrates that Raman spectroscopy is a powerful in situ technique for investigating the etching process of silicon surface. |
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| Keywords: | Raman microscopy Silicon Surface oxidation |
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