| 常压下金催化硅纳米线生长实验研究 |
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| 引用本文： | 于蕾,凌晨晓骥,马昕瑶,闫帅,崔益民.常压下金催化硅纳米线生长实验研究[J].大学物理实验,2012(3):1-4,13. |
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| 作者姓名： | 于蕾 凌晨晓骥 马昕瑶 闫帅 崔益民 |
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| 作者单位： | 北京航空航天大学 |
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| 基金项目： | 北京市国家大学生创新性实验计划(101000631) |
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| 摘 要： | 采用固一液一固（SLS）生长机制，研究常压下金催化硅纳米线的制备方法。实验中将硅基Au薄膜在氩氢气中退火，退火温度为1050℃和1080℃，退火完成后在扫描电镜下观察硅片表面的形貌变化，分析不同退火温度、通气量和金膜厚度下的实验结果，并在此基础上进一步讨论了各变量对硅纳米线的生长影响及其机理。
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| 关 键 词： | 硅纳米线 常压 SLS生长机制 |
Study on the Growth of Silicon Nanowires under Atmosphere Pressure |
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| YU Lei,LINCHEN Xiao-ji,MA Xin-yao,YAN Shuai,CUI Yi-min.Study on the Growth of Silicon Nanowires under Atmosphere Pressure[J].Physical Experiment of College,2012(3):1-4,13. |
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| Authors: | YU Lei LINCHEN Xiao-ji MA Xin-yao YAN Shuai CUI Yi-min |
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| Institution: | (BeiHang university,BeiJing 100191) |
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| Abstract: | In this paper,using solid-liquid-solid(SLS) growth mechanism,Si nanowires were fabricated on Si substrates by Au catalyst under atmosphere pressure.In the experiments,the Si substrates with different thick Au films are heated at 1050℃ and 1080℃ under flowing Ar/H2 mixing gas,respectively.Nanowires with different length and diameter are inspected by SEM,effects of processing variables such as temperature,flowing gas velocity,Au film thickness are investigated,and the effects to growth mechanism are analyzed. |
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| Keywords: | si nanowires atmosphere pressure SLS growth mechanism |
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