Local density of states of GaAs and InAs surfaces: Ideal (111), (001) and (110) surfaces and monoatomic steps on the (111) and the (001) surface |
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| Authors: | G V Gadiyak A A Karpushin I V Korolenko Yu N Morokov S G Sazonov M Tomášek |
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| Institution: | (1) Institute of Theoretical and Applied Mechanics, Acad. Sci., USSR;(2) Research Department, Siberian Section, and Novosibirsk State University, 630090 Novosibirsk 90, USSR;(3) J. Heyrovský Institute of Physical Chemistry and Electrochemistry, Czechosl. Acad. Sci., Máchova 7, 121 38 Praha 2, Czechoslovakia |
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| Abstract: | The ideal (111), (001) and (110) surfaces of GaAs and InAs are investigated by means of the LCAO Green function recursion method to obtain local density of states. Main emphasis is laid on the analysis of the nature and character of the inherent surface states. For this purpose, several imperfections on the (111) and the (001) surface (i.e. vacancies and steps with varying topology) are treated to demonstrate the local character of Shockley surface states and to confirm their chemical nature. The applicability of the results obtained to other A3B5 compounds is discussed. Comparison with experiment and other theoretical investigations is also made. |
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