The effects of chemical etching of porous silicon on Raman spectra |
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Authors: | Masato Ohmukai Nobutomo Uehara Tetsuya Yamasaki Yasuo Tsutsumi |
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Institution: | (1) Department of Electrical Engineering, Akashi College of Technology, 674-8501 Akashi, Hyogo, Japan |
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Abstract: | We have investigated the effects of chemical etching on Raman spectra of porous silicon. The as-anodized porous silicon consisted
mainly of crystalline silicon, as indicated by the Raman spectra. The background in the spectrum was strong, indicating that
the porous silicon surface was rough due to the presence of pores. When chemical etching was performed five times, the Raman
spectrum revealed the presence of spherically shaped nanocrystalline silicon whose diameter was around 3.5 nm. Further chemical
etching, however, extinguished the nanocrystallites, in addition to smoothing the surface morphology. |
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Keywords: | PACS" target="_blank">PACS 78 55 Mb |
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