Interface polarons in a realistic heterojunction potential |
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| Authors: | SL Ban JE Hasbun |
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| Institution: | (1) Department of Physics, State University of West Georgia, Carrollton, Georgia 30118, USA, US |
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| Abstract: | The ground states of interface polarons in a realistic heterojunction potential are investigated by considering the bulk and
the interface optical phonon influence. A self-consistent heterojunction potential is used and an LLP-like method is adopted
to obtain the polaron effect. The numerical computation has been done for the Zn1-xCdxSe/ZnSe system to obtain the polaron ground state energy, self energy and effective mass parallel to the interface. A simplified
coherent potential approximation is developed to obtain the parameters of the ternary mixed crystal and the energy band offset
of the heterojunction. It is found that at small Cd concentration the bulk longitudinal optical phonons give the main contribution
for lower areal electron densities, whereas the interface phonon contribution is dominant for higher areal electron densities.
The interface polaron effect is weaker than the effect obtained by the three dimensional bulk phonon and by the two dimensional
interface phonon models.
Received 17 September 1998 |
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| Keywords: | PACS 73 40 Lq Other semiconductor-to-semiconductor contacts p-n junctions and heterojunctions - 71 38 +i Polarons and electron-phonon interactions - 63 20 kr Phonon-electron and phonon-phonon interactions |
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