Krypton incorporation in sputtered silicon films |
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| Authors: | M J W Greuter L Niesen R A Hakvoort J de Roode A van Veen A J M Berntsen W G Sloof |
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| Institution: | (1) Nuclear Solid State Physics, Materials Science Centre, Groningen University, Nijenborgh 4, 9747 AG Groningen, The Netherlands;(2) Interfacultair Reactor Instituut, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands;(3) Department of Atomic and Interface Physics, Debye Institute, Utrecht University, PO Box 80000, 3508 TA Utrecht, The Netherlands;(4) Laboratory of Metallurgy, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands |
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| Abstract: | The incorporation of Kr in sputtered a-Si films has been investigated in a systematic way by varying the Kr to Si flux, yielding Kr concentrations up to 5 at%. Compositions were determined with X-ray microanalysis. A model has been applied to describe the composition of the growing film. The layers were characterized by positron annihilation, Raman spectroscopy and Mössbauer spectroscopy. The present results clearly indicate that ion assisted growth leads to a strong reduction of open volume defects, and that the Kr resides in very small clusters. |
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