60keV质子辐照对TiNi记忆合金薄膜马氏体相变的影响

利用磁控溅射的方法在氧化后的单晶Si基片上制备了TiNi形状记忆合金薄膜，利用示差扫描量热法和原位X射线衍射研究了薄膜的马氏体相变特征。通过60keV质子注入（辐照）薄膜样品研究了H+离子对合金薄膜马氏体相变特征的影响，结果表明氢离子注入后引起了马氏体相变开始Ms和结束点Mf以及逆马氏体相变开始As和结束温度Af的下降，而对R相变开始Rs和结束温度Rf影响不大。掠入射X射线衍射表明H+离子注入后有氢化物形成。H+离子注入形成的氢化物是引起相变点的变化的主要因素。

Flat-field-correction method for image taken by a fiber optic taper coupled CCD camera

Image taken by a fiber optic taper coupled CCD camera system characterizes the great difference among its pixels responsivity. This difference will obviously degrades image quality and makes it difficulty to get a clear image. The flat field correction method especially for the system mentioned above is a very useful method to get a better clear image. The flat field correction method includes three steps:1.A black background image is firstly obtained from such a system under the certain temperature and integration time; 2.The image which will be treated as a reference image for flat field correction should be taken under uniformity irradiation as possible and the same temperature and integration time;3.Subtracting the black background image from the reference image will obtain an important lookup table image and can calibrate each pixels responsivity to get a clear image. In our works, some images with very big PRNU problem are processed by the flat field correction method and the good result can be obtained.