| γ辐照前后多栅NMOS转移特性曲线交叉现象机理分析 |
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| 引用本文： | 潘立丁,石瑞英,龚敏,刘杰.γ辐照前后多栅NMOS转移特性曲线交叉现象机理分析[J].强激光与粒子束,2014,26(8):084003. |
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| 作者姓名： | 潘立丁 石瑞英 龚敏 刘杰 |
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| 作者单位： | 1.四川大学 物理科学与技术学院 微电子学系, 成都 61 0064; |
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| 基金项目： | 国家自然科学基金项目(61176096) |
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| 摘 要： | 在研究0.5μm多栅NMOS场效应管γ辐照总剂量效应实验时,发现部分多栅NMOS器件辐照前后的转移特性曲线出现交叉现象,相关的解释鲜见报道。经过分析提出假设:部分多栅NMOS在γ辐照实验过程中各栅极受到剂量不均匀的辐照,导致辐照前后转移特性曲线出现交叉现象。计算机仿真结果表明:受到剂量不均匀的辐照后,多栅NMOS各栅极氧化层陷阱电荷和硅-二氧化硅界面电荷浓度不一致,使各栅极阈值电压不同步漂移,导致器件跨导退化和转移特性曲线交叉。通过仿真验证能够说明,所提出的假设合理地解释了实验中的现象。
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| 关 键 词： | 多栅NMOS 转移特性 不均匀辐照 总剂量效应 计算机仿真 |
| 收稿时间： | 2014/1/8 |
Mechanism of crossover of transconductance curves in 0.5 μm multi-finger NMOS FETs before and after γ irradiation |
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| Institution: | 1.Microelectronics Department,College of Physical Science and Technology,Sichuan University,Chengdu 610064,China;2.Key Laboratory of Radiation Physics and Technology of Ministry of Education,Sichuan University,Chengdu 610064,China;3.Key Laboratory of Microelectronics Technology of Sichuan Province,College of Physical Science and Technology,Sichuan University,Chengdu 610064,China |
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| Abstract: | The crossover phenomenon of transconductance curves was found in part of 0.5 m multi-finger NMOS FETs after irradiation experiments. To give a reasonable explanation, we assumed that the radiation effects on each gate of this part of multi-finger NMOS FETs are non-uniform, and the corresponding computer simulations were performed. The simulation results indicate that after non-uniform irradiation, the difference of oxide trapped charges and interface charges of each gate in multi-finger NMOS FETs will make threshold voltage shift asynchronously, leading to the degeneration of transconductance and the crossover of transconductance curves. |
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| Keywords: | multi-finger NMOS transfer characteristics non-uniform irradiation total dose effects computer simulation |
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