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电子碰撞激发机制中自电离与双电子俘获
引用本文:蓝可,吴建周.电子碰撞激发机制中自电离与双电子俘获[J].强激光与粒子束,1998,10(4):481-485.
作者姓名:蓝可  吴建周
作者单位:北京应用物理与计算数学研究所, 北京8009信箱12分箱, 100088
摘    要: 以Ge为例,研究了双电子复合代替自电离与双电子俘获对离子布居的影响;通过解包括双激发态和自电离与双电子俘获过程的速率方程组,研究了类F离子与类Ne离子基态对19.6nm与23.6nm激光线上、下能级的布居贡献因子及类Na离子与类Ne离子的电离速率,并讨论了这两条激光线的反转与增益。

关 键 词:自电离与双电子俘获  双电子复合  类Ne-Ge离子碰撞机制
收稿时间:1900-01-01;

AUTOIONIZATION AND DIELECTRONIC CAPTURE IN Ne LIKE Ge COLLISIONAL X RAY LASER
Lan Ke,Wu Jianzhou and Zhang Yuquan Institute of Applied Physics and Computational Mathematics,P.O. Box ,Beijing.AUTOIONIZATION AND DIELECTRONIC CAPTURE IN Ne LIKE Ge COLLISIONAL X RAY LASER[J].High Power Laser and Particle Beams,1998,10(4):481-485.
Authors:Lan Ke  Wu Jianzhou and Zhang Yuquan Institute of Applied Physics and Computational Mathematics  PO Box  Beijing
Institution:Institute of Applied Physics and Computational Mathematics,P.O. Box 8009 12,Beijing, 100088
Abstract:Comparison of autoionization and dielectronic capture with dielectronic recombination in ion population in Ge plasma was given. Solving the coupled rate equations, the contribution factors from F like and Ne like ions on the lower and the upper laser level of 19.6 and 23.6 nm lines, and the ionization rates of Na like and Ne like ions were studied. Further more, inversion factor and gain at 19.6 and 23.6nm lines were discussed .
Keywords:autoionization and dielectronic capture  dielectronic recombination  Ne  like Ge plasma collisional x  ray laser
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