| 基于半导体断路开关的8 MW,10 kHz脉冲发生器 |
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| 引用本文： | 丁臻捷,浩庆松,苏建仓,孙旭.基于半导体断路开关的8 MW,10 kHz脉冲发生器[J].强激光与粒子束,2009,21(10). |
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| 作者姓名： | 丁臻捷 浩庆松 苏建仓 孙旭 |
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| 作者单位： | 1. 西安交通大学 电子物理与器件教育部重点实验室, 西安 710049;2. 西北核技术研究所, 西安 710024 |
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| 基金项目： | 国家高技术发展计划项目 |
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| 摘 要： | 功率器件半导体断路开关具有高重复频率工作能力。采用高速绝缘栅双极晶体管组件作为初级充电回路的主开关，建立了一台工作频率为10 kHz的脉冲发生器。脉冲发生器采用磁饱和脉冲变压器、磁开关及高压脉冲电容器组等固态器件进行两级脉冲压缩，产生小于100 ns的电流脉冲,对半导体断路开关进行泵浦，半导体断路开关反向截断泵浦电流在负载上产生高压脉冲输出。实验装置在电阻负载上得到了脉冲输出功率约为8.6 MW，脉冲宽度约10 ns，重复频率10 kHz的高压脉冲输出。
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| 关 键 词： | 半导体断路开关 磁饱和脉冲变压器 磁开关 脉冲发生器 |
| 收稿时间： | 1900-01-01; |
8 MW, 10 kHz semiconductor opening switch pulsed generator |
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| Ding Zhenjie,Hao Qingsong,Su Jiancang,Sun Xu.8 MW, 10 kHz semiconductor opening switch pulsed generator[J].High Power Laser and Particle Beams,2009,21(10). |
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| Authors: | Ding Zhenjie Hao Qingsong Su Jiancang Sun Xu |
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| Institution: | 1. Key laboratory for Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China;2. Northwest Institute of Nuclear Technology, P. O. Box 69-13, Xi’an 710024, China |
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| Abstract: | This paper presents the research carried out with the semiconductor opening switch(SOS). Loaded with high frequency pumping current, the switch could work on high frequency (1 MHz). A high frequency nanosecond-pulsed generator with a pulse power up to 9.3 MW, output voltage of 22.0~35.7 kV, pulse duration of about 10 ns, and repetition rates of 10 kHz is developed. Ultrafast IGBT is used in primary charged unit to provide low voltage pulse for magnetic compression unit. The magnetic switch and saturable transformer are used to compress primary pulse and pump SOS. The reverse pumping current switching-off is performed by SOS in about 4.3 ns, which results in the formation of an output voltage pulse across output load. |
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| Keywords: | magnetic saturable transformer magnetic switch pulse generator |
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