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硅基支撑系统的光刻工艺
引用本文:罗跃川,张继成.硅基支撑系统的光刻工艺[J].强激光与粒子束,2012,24(11):2673-2676.
作者姓名:罗跃川  张继成
作者单位:1.中国工程物理研究院 激光聚变研究中心, 四川 绵阳 621 900
摘    要:为提高硅基支持系统制备中光刻过程的线宽精度,用正交试验分析了前烘、曝光、显影主要步骤中一些主要参数对制备结果的影响,得到了它们的影响程度的规律以及较优的参数组合。在此基础上设计和训练了合适的前向误差反向传播神经网络,对主要工艺参数进行了进一步的分析、预测和优选,并用实验加以验证。最终得到在胶厚约1.55 m时,前烘温度100 ℃,时间90 s; 曝光时间5 s; 显影温度15 ℃,时间90 s时,光刻后图形的线宽偏差最小,达到了0.3 m以下。

关 键 词:硅基支撑系统    光刻    线宽偏差    正交试验    BP神经网络
收稿时间:2012/1/12

Photolithography process of Si support system
Luo Yuechuan , Zhang Jicheng.Photolithography process of Si support system[J].High Power Laser and Particle Beams,2012,24(11):2673-2676.
Authors:Luo Yuechuan  Zhang Jicheng
Institution:1.Research Center of Laser Fusion,CAEP,P.O.Box 919-987,Mianyang 621900,China
Abstract:To improve the photolithography precision of Si support system, some main process parameters in soft bake, exposure, development were analyzed with orthogonal experiment.The influence degree of the parameters, including soft bake time, exposure time, development time and temperature, and their best combination were found. On this basis, a proper back propagation (BP) neural network was designed and trained and the experimental data were analyzed and optimized by the BP neural network. Verification experiments supported the correctness of the BP neural network. When the photoresist is 1.55 μm thick, the optimum process parameters are: soft bake temperature 100 ℃, time 90 s; exposure time 5 s; development temperature 15 ℃, time 90 s. On this condition, the linewidth error can be less than 0.3 μm.
Keywords:Si support system  photolithography  linewidth error  orthogonal experiment  BP neural network
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